component
PBSS4520X-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPBSS4520X-HXY
HXY MOSFET · Bipolar (BJT) · SOT-89
PBSS4520X-HXY from HXY MOSFET, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; emitter-base voltage is rated at 6 V maximum (VEBO) and emitter cut-off current is 0.5 µA max at VEB=5V. |
| 2 | C | passive | Collector of the NPN transistor (the center lead, also the SOT-89 tab); rated VCEO 20 V, VCBO 50 V and 5 A continuous collector current. |
| 3 | E | passive | Emitter of the NPN transistor; total power dissipation is 500 mW and junction temperature range is -55 to 150 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 50 | V | 1 | |||
| Collector-emitter voltage | VCEO | 20 | V | 1 | |||
| Emitter-base voltage | VEBO | 6 | V | 1 | |||
| Collector current, continuous | IC | 5 | A | 1 | |||
| Collector power dissipation | PC | 500 | mW | 1 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | °C | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | IC=50μA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 20 | V | IC=1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=50μA | 1 | ||
| Collector cut-off current | ICBO | 0.5 | μA | VCB=40V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 0.5 | μA | VEB=5V,IC=0 | 1 | ||
| DC current gain | hFE | 180 | 390 | VCE=2V,IC=0.5A | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 1 | V | IC=4A,IB=100mA | 1 | ||
| Transition frequency | fT | 150 | MHz | VCE=6V,IC=50mA,f=100MHz | 1 | ||
| Collector output capacitance | Cob | 30 | pF | VCB=20V,IE=0,f=1MHz | 1 |
CAD (KiCad official)
- Symbol:
PBSS4520X-HXY - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
pbss4520x-hxy-etched.step/pbss4520x-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pbss4520x-hxy.step/pbss4520x-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (3 pp, sha256
b077cef01ded93b8, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).