component
BCP54-10TF
Public Made by Adomby adom
Nexperia Bipolar Transistors - BJT, SOT-223-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBCP54-10TF
Nexperia · Bipolar Transistors - BJT · SOT-223-4
BCP54-10TF from Nexperia, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the NPN transistor. |
| 2 | C | passive | Collector terminal of the NPN transistor, electrically common with pin 4. |
| 3 | E | passive | Emitter terminal of the NPN transistor. |
| 4 | C | passive | Collector terminal of the NPN transistor, electrically common with pin 2 and the heatsink tab. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-223-4 |
| Category | Transistors |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCBO | 45 | V | open emitter | 3 | ||
| collector-emitter voltage | VCEO | 45 | V | open base | 3 | ||
| emitter-base voltage | VEBO | 5 | V | open collector | 3 | ||
| collector current | IC | 1 | A | 3 | |||
| peak collector current | ICM | 2 | A | single pulse; tp ≤ 1 ms | 3 | ||
| base current | IB | 0.2 | A | 3 | |||
| peak base current | IBM | 0.3 | A | single pulse; tp ≤ 1 ms | 3 | ||
| total power dissipation | Ptot | 0.6 | W | Tamb ≤ 25 °C; [1] FR4 PCB, single-sided copper, tin-plated, standard footprint | 3 | ||
| total power dissipation | Ptot | 1 | W | Tamb ≤ 25 °C; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 | 3 | ||
| total power dissipation | Ptot | 1.3 | W | Tamb ≤ 25 °C; [3] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 | 3 | ||
| total power dissipation | Ptot | 1.8 | W | Tamb ≤ 25 °C; [5] FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2 | 3 | ||
| junction temperature | Tj | 150 | °C | 3 | |||
| ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 209 | K/W | [1] FR4 PCB, single-sided copper, tin-plated, standard footprint | 5 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 125 | K/W | [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 | 5 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 97 | K/W | [3] FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 | 5 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 70 | K/W | [5] FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2 | 5 | ||
| thermal resistance from junction to solder point | R(j-sp) | 18 | K/W | in free air | 5 | ||
| collector-base breakdown voltage | V(BR)CBO | 45 | V | IC = 100 µA; IE = 0 A | 7 | ||
| collector-emitter breakdown voltage | V(BR)CEO | 45 | V | IC = 2 mA; IE = 0 A | 7 | ||
| emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE = 100 µA; IC = 0 A | 7 | ||
| collector-base cut-off current | ICBO | 100 | nA | VCB = 30 V; IE = 0 A | 7 | ||
| collector-base cut-off current | ICBO | 10 | µA | VCB = 30 V; IE = 0 A; Tj = 150 °C | 7 | ||
| emitter-base cut-off current | IEBO | 100 | nA | VEB = 5 V; IC = 0 A | 7 | ||
| DC current gain | hFE | 63 | VCE = 2 V; IC = 5 mA (BCP54T, -10T, -16T) | 7 | |||
| DC current gain | hFE | 40 | VCE = 2 V; IC = 500 mA; [1] pulsed; tp ≤ 300 µs; δ ≤ 0.02 | 7 | |||
| DC current gain | hFE | 63 | 160 | VCE = 2 V; IC = 150 mA; [1] pulsed; tp ≤ 300 µs; δ ≤ 0.02 (BCP54-10T) | 7 | ||
| collector-emitter saturation voltage | VCEsat | 500 | mV | IC = 500 mA; IB = 50 mA; [1] pulsed; tp ≤ 300 µs; δ ≤ 0.02 | 7 | ||
| base-emitter voltage | VBE | 1 | V | VCE = 2 V; IC = 500 mA; [1] pulsed; tp ≤ 300 µs; δ ≤ 0.02 | 7 | ||
| transition frequency | fT | 100 | 155 | MHz | VCE = 5 V; IC = 50 mA; f = 100 MHz | 7 |
CAD (KiCad official)
- Symbol:
BCP54-10TF - Footprint:
Package_TO_SOT_SMD:SOT-223 - 3D model: SOT-223-4 (KiCad packages3D, STEP)
- 3D model files:
bcp54-10tf-etched.step/bcp54-10tf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcp54-10tf.step/bcp54-10tf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (14 pp, sha256
beda417a7bfe8e8b, retrieved 2026-11-02, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).