component
STS10P4LLF6
Public Made by Adomby adom
STMicroelectronics MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTS10P4LLF6
STMicroelectronics · MOSFETs · SO-8
STS10P4LLF6 from STMicroelectronics, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, pins 1, 2 and 3 are internally common; device is rated VDS -40 V and ID -10 A. |
| 2 | S | passive | Source of the P-channel MOSFET, pins 1, 2 and 3 are internally common; device is rated VDS -40 V and ID -10 A. |
| 3 | S | passive | Source of the P-channel MOSFET, pins 1, 2 and 3 are internally common; device is rated VDS -40 V and ID -10 A. |
| 4 | G | input | Gate of the P-channel MOSFET with maximum gate-source voltage of ±20 V and threshold of -1 to -2.5 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, pins 5, 6, 7 and 8 are internally common; drain-source voltage -40 V max and pulsed drain current -40 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, pins 5, 6, 7 and 8 are internally common; drain-source voltage -40 V max and pulsed drain current -40 A. |
| 7 | D | passive | Drain of the P-channel MOSFET, pins 5, 6, 7 and 8 are internally common; drain-source voltage -40 V max and pulsed drain current -40 A. |
| 8 | D | passive | Drain of the P-channel MOSFET, pins 5, 6, 7 and 8 are internally common; drain-source voltage -40 V max and pulsed drain current -40 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -40 | V | 2 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 2 | ||
| Drain current (continuous) | ID | -10 | A | Tamb = 25 °C | 2 | ||
| Drain current (continuous) | ID | -5.6 | A | Tamb = 100 °C | 2 | ||
| Drain current (pulsed) | IDM | -40 | A | Pulse width limited by safe operating area | 2 | ||
| Total power dissipation | PTOT | 2.7 | W | Tamb = 25 °C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Operating junction temperature | TJ | 150 | °C | 2 | |||
| Thermal resistance, junction-to-ambient | RthJA | 47 | °C/W | Mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 sec | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | -40 | V | ID = -250 µA | 3 | ||
| Zero gate voltage drain current | IDSS | -1 | µA | VDS = -40 V | 3 | ||
| Zero gate voltage drain current | IDSS | -10 | µA | VDS = -40 V, TC = 125 °C | 3 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 3 | |
| Gate threshold voltage | VGS(th) | -2.5 | -1 | V | VDS = VGS, ID = -250 µA | 3 | |
| Static drain-source on-resistance | RDS(on) | 12.5 | 15 | mΩ | VGS = -10 V, ID = -3 A | 3 | |
| Static drain-source on-resistance | RDS(on) | 17 | 20 | mΩ | VGS = -4.5 V, ID = -3 A | 3 | |
| Forward on voltage | VSD | -1.1 | V | VGS = 0 V, ISD = -3 A | 3 | ||
| Input capacitance | Ciss | 3525 | pF | VDS = -25 V, f = 1 MHz, VGS = 0 V | 3 | ||
| Output capacitance | Coss | 344 | pF | VDS = -25 V, f = 1 MHz, VGS = 0 V | 3 | ||
| Reverse transfer capacitance | Crss | 238.5 | pF | VDS = -25 V, f = 1 MHz, VGS = 0 V | 3 | ||
| Total gate charge | Qg | 34 | nC | VDD = -20 V, ID = -10 A, VGS = -4.5 V | 3 | ||
| Gate-source charge | Qgs | 11.3 | nC | VDD = -20 V, ID = -10 A, VGS = -4.5 V | 3 | ||
| Gate-drain charge | Qgd | 13.8 | nC | VDD = -20 V, ID = -10 A, VGS = -4.5 V | 3 | ||
| Turn-on delay time | td(on) | 49.4 | ns | VDD = -20 V, ID = -5 A, RG = 4.7 Ω, VGS = -10 V | 3 | ||
| Rise time | tr | 60.6 | ns | VDD = -20 V, ID = -5 A, RG = 4.7 Ω, VGS = -10 V | 3 | ||
| Turn-off-delay time | td(off) | 170 | ns | VDD = -20 V, ID = -5 A, RG = 4.7 Ω, VGS = -10 V | 3 | ||
| Fall time | tf | 20 | ns | VDD = -20 V, ID = -5 A, RG = 4.7 Ω, VGS = -10 V | 3 | ||
| Reverse recovery time | trr | 29 | ns | ISD = -5 A, di/dt = 100 A/µs, VDD = -32 V, TJ = 150 °C | 3 | ||
| Reverse recovery charge | Qrr | 27.6 | nC | ISD = -5 A, di/dt = 100 A/µs, VDD = -32 V, TJ = 150 °C | 3 | ||
| Reverse recovery current | IRRM | -1.9 | A | ISD = -5 A, di/dt = 100 A/µs, VDD = -32 V, TJ = 150 °C | 3 |
CAD (KiCad official)
- Symbol:
STS10P4LLF6 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
sts10p4llf6-etched.step/sts10p4llf6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sts10p4llf6.step/sts10p4llf6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (13 pp, sha256
32938de497ca98c8, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).