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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

2SD1816G-S-TN3-R

UTC(Unisonic Tech) · Bipolar (BJT) · TO-252-2(DPAK)

2SD1816G-S-TN3-R from UTC(Unisonic Tech), in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	B	input	Base terminal of the NPN transistor, pin 1 of the TO-252 package per the datasheet pin assignment (B C E) for the TN3-R ordering code.
2	C	passive	Collector terminal of the NPN transistor, pin 2 of the TO-252 package per the datasheet pin assignment (B C E); the datasheet gives Collector-Emitter ratings of 100 V VCEO and 4 A DC collector current (8 A pulse) for the device.
3	E	passive	Emitter terminal of the NPN transistor, pin 3 of the TO-252 package per the datasheet pin assignment (B C E).

Key specifications

Parameter	Value
Manufacturer	UTC(Unisonic Tech)
Package	TO-252-2(DPAK)
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-Base Voltage	VCBO			120	V		2
Collector-Emitter Voltage	VCEO			100	V		2
Emitter-Base Voltage	VEBO			6	V		2
Collector Current DC	IC			4	A		2
Collector Current PULSE	IC			8	A	Duty=1/2, Pw=20ms	2
Collector Dissipation TA=25°C (TO-251/TO-251S/TO-252)	PC			1	W	TA=25°C, TO-252	2
Collector Dissipation TC=25°C (TO-251/TO-251S/TO-252)	PC			15	W	TC=25°C, TO-252	2
Junction Temperature	TJ			150	°C		2
Storage Temperature	TSTG	-40		150	°C		2
Collector Base Breakdown Voltage	BVCBO	120			V	IC =10μA, IE =0	2
Collector Emitter Breakdown Voltage	BVCEO	100			V	IC =1mA, RB=∞	2
Emitter Base Breakdown Voltage	BVEBO	6			V	IE =10μA, IC=0	2
Collector Cut-Off Current	ICBO			1	μA	VCB = 100 V, IE =0	2
Emitter Cut-Off Current	IEBO			1	μA	VEB = 4V, IC=0	2
DC Current Transfer Ratio (rank S)	hFE1	140		280		VCE = 5V, IC = 0.5A	2
DC Current Transfer Ratio	hFE2	40				VCE =5V, IC = 3A	2
Base-Emitter Saturation Voltage	VBE(SAT)		0.9	1.2	V	IC = 2A, IB =0.2A	2
Collector-Emitter Saturation Voltage	VCE(SAT)		150	400	mV	IC = 2A, IB=0.2A	2
Transition Frequency	fT		180		MHz	VCE =10V, IC =0.5A	2
Output Capacitance	Cob		40		pF	VCB =10V, IE =0A, f =1MHz	2
Turn-on Time	tON		100		ns	See test circuit	2
Storage Time	tSTG		900		ns	See test circuit	2
Fall Time	tF		50		ns	See test circuit	2

CAD (KiCad official)

Symbol: 2SD1816G-S-TN3-R
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
3D model files: 2sd1816g-s-tn3-r-etched.step / 2sd1816g-s-tn3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd1816g-s-tn3-r.step / 2sd1816g-s-tn3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: UTC(Unisonic Tech) datasheet (5 pp, sha256 872acbfe756a5a40, retrieved 2026-10-17, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF