component
KIA08TB70DD
Public Made by Adomby adom
KIA Semicon Tech Fast Recovery / High Efficiency Diodes, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKIA08TB70DD
KIA Semicon Tech · Fast Recovery / High Efficiency Diodes · TO-252-2
KIA08TB70DD from KIA Semicon Tech, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Diode cathode terminal for the TO-252/TO-263 package, pin 1 of the three printed pins. |
| 2 | Cathode | passive | Second diode cathode terminal for the TO-252/TO-263 package, listed as an additional cathode pin. |
| 3 | Anode | passive | Diode anode terminal for the TO-252/TO-263 package. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-252-2 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak repetitive reverse voltage | VRRM | 700 | V | 2 | |||
| Working peak reverse voltage | VRWM | 700 | V | 2 | |||
| DC blocking voltage | VR | 700 | V | 2 | |||
| Average rectified forward current | IF(AV) | 8 | A | Total device, (Rated VR), TC = 150°C | 2 | ||
| Peak repetitive forward current | IFM | 16 | A | Rated VR, square wave, 20 kHz, TC = 150°C | 2 | ||
| Nonrepetitive peak surge current | IFSM | 100 | A | Surge applied at rated load conditions, halfwave, single phase, 60 Hz | 2 | ||
| Operating junction temperature and storage temperature range | TJ,Tstg | -65 | 175 | ºC | 2 | ||
| Maximum thermal resistance, junction-to-case | RθJC | 2 | ºC/W | 2 | |||
| Maximum Instantaneous Forward Voltage | VF | 1.8 | 2.6 | V | IF=8.0A, TC=25°C | 2 | |
| Maximum Instantaneous Reverse Current at TJ=150°C | IR | 500 | μA | VR=600V, TJ=150°C | 2 | ||
| Maximum Instantaneous Reverse Current at TJ=25°C | IR | 25 | μA | VR=600V, TJ=25°C | 2 | ||
| Maximum Reverse Recovery Time | trr | 30 | ns | IF=0.5A, IR=1.0A, IREC=0.25A | 2 |
CAD (KiCad official)
- Symbol:
KIA08TB70DD - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
kia08tb70dd-etched.step/kia08tb70dd-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kia08tb70dd.step/kia08tb70dd.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (2 pp, sha256
3fb84f07800b2c4a, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).