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Contents

README

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IPD80R4K5P7ATMA1

Infineon Technologies · MOSFETs · TO-252

IPD80R4K5P7ATMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the 800 V CoolMOS P7 MOSFET; Table 2 limits VGS to ±20 V static and ±30 V for AC (f>1 Hz), and the part has an integrated Zener diode for ESD protection.
2 Drain passive Drain terminal, electrically connected to the tab; the part is rated for VDS of 800 V at Tj=25°C and continuous drain current ID of 1.5 A at TC=25°C.
3 Source passive Source terminal; the internal body diode is rated for continuous diode forward current IS of 1.1 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 1.5 A TC=25°C 3
Continuous drain current ID 1 A TC=100°C 3
Pulsed drain current ID,pulse 2.6 A TC=25°C 3
Avalanche energy, single pulse EAS 1 mJ ID=0.2A; VDD=50V 3
Avalanche energy, repetitive EAR 0.02 mJ ID=0.2A; VDD=50V 3
Avalanche current, repetitive IAR 0.2 A 3
MOSFET dv/dt ruggedness dv/dt 100 V/ns VDS=0 to 400V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (AC, f>1 Hz) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 13 W TC=25°C 3
Operating and storage temperature Tj,Tstg -55 150 °C 3
Continuous diode forward current IS 1.1 A TC=25°C 3
Diode pulse current IS,pulse 2.6 A TC=25°C 3
Reverse diode dv/dt dv/dt 1 V/ns VDS=0 to 400V, ISD<=0.2A, Tj=25°C 3
Maximum diode commutation speed dif/dt 50 A/µs VDS=0 to 400V, ISD<=0.2A, Tj=25°C 3
Thermal resistance, junction - case RthJC 9.4 °C/W 3
Thermal resistance, junction - ambient RthJA 62 °C/W Device on PCB, minimal footprint 3
Thermal resistance, junction - ambient for SMD version RthJA 35 45 °C/W Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm2 copper area for drain connection and cooling; vertical PCB, no air stream cooling 3
Soldering temperature, wave- & reflow soldering allowed Tsold 260 °C reflow MSL1 3
Drain-source breakdown voltage V(BR)DSS 800 V VGS=0V, ID=1mA 4
Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS, ID=0.02mA 4
Drain-source on-state resistance RDS(on) 3.8 4.5 Ω VGS=10V, ID=0.4A, Tj=25°C 4
Gate-source leakage current incl. zener diode IGSS 1 µA VGS=20V, VDS=0V 4

CAD (KiCad official)

  • Symbol: IPD80R4K5P7ATMA1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd80r4k5p7atma1-etched.step / ipd80r4k5p7atma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd80r4k5p7atma1.step / ipd80r4k5p7atma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 a71365dc0e1ed9bb, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF