Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

ESD63011N-2

WILLSEMI(Will Semicon) · ESD Protection Devices · DFN1006-2L

ESD63011N-2 from WILLSEMI(Will Semicon), in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Pin1 passive Pin 1 is one of the two terminals of the ESD63011N bidirectional TVS, which is rated for ±20kV contact discharge per IEC61000-4-2 and 6A (8/20μs) surge per IEC61000-4-5; the datasheet does not state a separate function for this pin.
2 Pin2 passive Pin 2 is the other of the two terminals of the ESD63011N bidirectional TVS, which has a 5.0V maximum stand-off voltage (VRWM); the datasheet does not state a separate function for this pin.

Key specifications

Parameter Value
Manufacturer WILLSEMI(Will Semicon)
Package DFN1006-2L
Category TVS/Fuse/Board Level Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse maximum working voltage VRWM 5 V 2
Reverse breakdown voltage VBR 5.8 9 V IT = 1mA 2
Clamping voltage (8/20us) VCL 7 8 V IPP = 1A, tp = 8/20μs 2
Clamping voltage (8/20us) VCL 9.5 10.5 V IPP = 6A, tp = 8/20μs 2
Peak pulse power Ppk 63 W tp = 8/20μs 2
Peak pulse current IPP 6 A tp = 8/20μs 2
ESD according to IEC61000-4-2 air discharge VESD -20 20 kV IEC61000-4-2 air discharge 2
ESD according to IEC61000-4-2 contact discharge VESD -20 20 kV IEC61000-4-2 contact discharge 2
Junction temperature TJ 125 oC 2
Operating temperature TOP -40 85 oC 2
Lead temperature TL 260 oC 2
Storage temperature TSTG -55 150 oC 2
Junction capacitance CJ 0.6 0.75 pF VR = 0V, f = 1MHz 2

CAD (KiCad official)

  • Symbol: ESD63011N-2
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: esd63011n-2-etched.step / esd63011n-2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd63011n-2.step / esd63011n-2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI(Will Semicon) datasheet (6 pp, sha256 84f134a773346a08, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF