component
G50N03D5
Public Made by Adomby adom
GOFORD MOSFETs, DFN-8L(5x6). Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Contents
README
markdownG50N03D5
GOFORD · MOSFETs · DFN-8L(5x6)
G50N03D5 from GOFORD, in a DFN-8L(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET. Pins 1, 2, and 3 are internally tied together as the source connection; typically bonded to the ground/return rail in low-side switching. Body diode anode. |
| 2 | S | passive | Source terminal (parallel connection with pins 1 and 3) to share current and reduce package resistance/inductance. Rated for ID = 50A continuous, IDM = 200A pulsed. |
| 3 | S | passive | Source terminal (parallel connection with pins 1 and 2). Body-diode anode; VSD ≤ 1.2V at ISD = 20A. |
| 4 | G | input | Gate terminal. Controls the channel via VGS; threshold VGS(th) = 1.1-2.4V (typ 1.6V). Absolute maximum VGS = ±20V. Total gate charge Qg ≈ 38.4nC at VGS = 10V. |
| 5 | D | passive | Drain terminal. Pins 5, 6, 7, 8 (and the exposed thermal pad) are internally the drain connection for the N-channel MOSFET. VDS rating = 30V. Body-diode cathode. |
| 6 | D | passive | Drain terminal (parallel with pins 5, 7, 8 and exposed pad). Used to carry drain current and conduct heat to the PCB. |
| 7 | D | passive | Drain terminal (parallel with pins 5, 6, 8 and exposed pad). Continuous drain current ID = 50A at TC = 25°C. |
| 8 | D | passive | Drain terminal (parallel with pins 5, 6, 7 and exposed thermal pad). All drain leads plus the pad should be soldered together to a copper plane to meet the 4.9°C/W junction-to-case thermal spec. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN-8L(5x6) |
| Category | Transistors/Thyristors |
| Pins | 8 |
Ordering variants
Same part, different packaging or reel option.
G50N03D5
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 50 | A | 1 | |||
| Pulsed Drain Current | IDM | 200 | A | note 1 | 1 | ||
| Power Dissipation | PD | 25.5 | W | 1 | |||
| Single pulse avalanche energy | EAS | 81 | mJ | note 2 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 49.8 | ºC/W | 1 | |||
| Maximum Junction-to-Case | RthJC | 4.9 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 30 V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1.1 | 1.6 | 2.4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 3.2 | 4 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 5.9 | 7 | mΩ | VGS = 4.5V, ID = 20A | 2 | |
| Continuous Body Diode Current | IS | 50 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | 1.2 | V | TJ = 25ºC, ISD = 20A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
G50N03D5 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8L(5x6) (KiCad packages3D, STEP)
- 3D model files:
g50n03d5-etched.step/g50n03d5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g50n03d5.step/g50n03d5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (None pp, sha256
731b3d4e30fe7344, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).