component

IRF7473TRPBF-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirf7473trpbf-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

IRF7473TRPBF-VB

VBsemi Elec · MOSFETs · SO-8

IRF7473TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the datasheet rates continuous source-drain diode current at 7 A (TC = 25 °C) and 3.8 A (TA = 25 °C).
2 S passive Source terminal of the N-channel MOSFET; the datasheet rates continuous source-drain diode current at 7 A (TC = 25 °C) and 3.8 A (TA = 25 °C).
3 S passive Source terminal of the N-channel MOSFET; the datasheet rates continuous source-drain diode current at 7 A (TC = 25 °C) and 3.8 A (TA = 25 °C).
4 G input Gate terminal of the MOSFET; gate-source voltage is rated ±20 V.
5 D passive Drain terminal of the MOSFET; drain-source voltage is rated 100 V and continuous drain current 9 A at TC = 25 °C.
6 D passive Drain terminal of the MOSFET; drain-source voltage is rated 100 V and continuous drain current 9 A at TC = 25 °C.
7 D passive Drain terminal of the MOSFET; drain-source voltage is rated 100 V and continuous drain current 9 A at TC = 25 °C.
8 D passive Drain terminal of the MOSFET; drain-source voltage is rated 100 V and continuous drain current 9 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 9 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 6 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID 5 A TJ = 150 °C, TA = 70 °C 1
Pulsed Drain Current IDM 40 A 1
Continuous Source-Drain Diode Current IS 7 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 3.8 A TA = 25 °C 1
Single Pulse Avalanche Current IAS 30 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 112 mJ 1
Maximum Power Dissipation PD 14 W TC = 25 °C 1
Maximum Power Dissipation PD 5 W TC = 70 °C 1
Maximum Power Dissipation PD 4 W TA = 25 °C 1
Maximum Power Dissipation PD 2 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 33 40 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient (steady state) RthJA 80 °C/W Steady state, per note d 1
Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 100 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 30 A VDS ≥ 10 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 33 mΩ VGS = 4.5 V, ID = 5 A 2
Total Gate Charge Qg 28.5 43 nC VDS = 75 V, VGS = 10 V, ID = 5 A 2
Total Gate Charge Qg 23 35 nC VDS = 75 V, VGS = 8 V, ID = 5 A 2
Gate Resistance Rg 0.8 1.3 Ω f = 1 MHz 2
Turn-on Delay Time td(on) 14 21 ns VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 12 18 ns VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 22 33 ns VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 6 10 ns VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-on Delay Time td(on) 16 24 ns VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 20 30 ns VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω 2
Fall Time tf 7 12 ns VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω 2
Body Diode Voltage VSD 0.77 1.2 V IS = 2.6 A 2
Body Diode Reverse Recovery Time trr 63 95 ns IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 110 165 nC IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: IRF7473TRPBF-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf7473trpbf-vb-etched.step / irf7473trpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7473trpbf-vb.step / irf7473trpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 83db55a3223a9978, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF