component
BL6N120-A
Public Made by Adomby adom
BL(Shanghai Belling) MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBL6N120-A
BL(Shanghai Belling) · MOSFETs · TO-220F
BL6N120-A from BL(Shanghai Belling), in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input of the N-channel MOSFET, limited to ±30 V gate-to-source with a 3.0 to 5.0 V threshold (VDS=VGS, ID=250µA). |
| 2 | Drain | passive | Drain of the N-channel MOSFET, rated 1200 V drain-to-source with 6 A continuous current and 24 A pulsed. |
| 3 | Source | passive | Source of the N-channel MOSFET, connected to the body diode anode, with 6 A continuous body-diode current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BL(Shanghai Belling) |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | VDSS | 1200 | V | VGS=0V, ID=250µA | 3 | ||
| Drain to Source Leakage Current (Tj = 25°C) | IDSS | 10 | µA | VDS =1200V, VGS= 0V, Tj = 25℃ | 3 | ||
| Drain to Source Leakage Current (Tj = 125°C) | IDSS | 500 | µA | VDS =960V, VGS= 0V, Tj = 125℃ | 3 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS =+30V | 3 | ||
| Gate to Source Reverse Leakage | IGSS(R) | 100 | nA | VGS =-30V | 3 | ||
| Gate Threshold Voltage | VGS(TH) | 3 | 5 | V | VDS = VGS, ID = 250µA(Note4) | 3 | |
| Drain-to-Source On-Resistance | RDS(ON) | 2.3 | 2.9 | Ω | VGS=10V, ID=3A(Note4) | 3 | |
| Continuous Source Current (Body Diode) | IS | 6 | A | TC=25 °C | 4 | ||
| Maximum Pulsed Current (Body Diode) | ISM | 24 | A | 4 | |||
| Diode Forward Voltage | VSD | 1.2 | V | IS=6A, VGS=0V(Note4) | 4 | ||
| Drain-to-Source Voltage | VDSS | 1200 | V | 2 | |||
| Continuous Drain Current | ID | 6 | A | 2 | |||
| Continuous Drain Current | ID | 3.5 | A | TC = 100 °C | 2 | ||
| Pulsed Drain Current | IDM | 24 | A | 2 | |||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 2 | ||
| Single Pulse Avalanche Energy | EAS | 480 | mJ | Note2: L=20mH, VDs=50V, Start TJ=25℃ | 2 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | Note3: ISD =6A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ | 2 | ||
| Power Dissipation (TO-220F, TO-3PF) | PD | 63 | W | TO-220F, TO-3PF | 2 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 2 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 2 | |||
| Junction-to-Case (FullPAK) | RθJC | 2 | ℃/W | FullPAK TO-220F/TO-3PF | 2 | ||
| Junction-to-Ambient (FullPAK) | RθJA | 62.5 | ℃/W | FullPAK TO-220F/TO-3PF | 2 |
CAD (KiCad official)
- Symbol:
BL6N120-A - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: BL(Shanghai Belling) datasheet (16 pp, sha256
7258037bc4ad8b84, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).