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NTMFS4C08N-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNTMFS4C08N-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
NTMFS4C08N-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (VDS rated 30 V, continuous drain current up to 60 A at TC=25℃). |
| 2 | S | passive | Source of the N-channel MOSFET, tied in parallel with the other source pins. |
| 3 | S | passive | Source of the N-channel MOSFET, tied in parallel with the other source pins. |
| 4 | G | input | Gate of the N-channel MOSFET, with gate-source voltage limited to ±20 V and threshold of 1.2 V to 2.5 V. |
| 5 | D | passive | Drain of the N-channel MOSFET (VDS 30 V, RDS(ON) below 5.8 mΩ at VGS=10 V). |
| 6 | D | passive | Drain of the N-channel MOSFET, tied in parallel with the other drain pins. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied in parallel with the other drain pins. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied in parallel with the other drain pins. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID@TC=25℃ | 60 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 38 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 135 | A | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 29.8 | mJ | VDD=25V,VGS=10V,L=0.1mH,IAS=24A | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 30 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 4.6 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient | RθJA | 50 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4.4 | 5.8 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 6.9 | 9 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 60 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Forward Transconductance | gfs | 67 | S | VDS=5V, ID=20A | 2 | ||
| Gate Resistance | Rg | 1.7 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge (4.5V) | Qg | 8 | nC | VDS=15V, VGS=4.5V, ID=15A | 2 | ||
| Gate-Source Charge | Qgs | 2.4 | nC | VDS=15V, VGS=4.5V, ID=15A | 2 | ||
| Gate-Drain Charge | Qgd | 3.2 | nC | VDS=15V, VGS=4.5V, ID=15A | 2 | ||
| Turn-On Delay Time | Td(on) | 7.1 | ns | VDD=15V, VGS=10V, RG=3.3, ID=15A | 2 | ||
| Rise Time | Tr | 40 | ns | VDD=15V, VGS=10V, RG=3.3, ID=15A | 2 | ||
| Turn-Off Delay Time | Td(off) | 15 | ns | VDD=15V, VGS=10V, RG=3.3, ID=15A | 2 | ||
| Fall Time | Tf | 6 | ns | VDD=15V, VGS=10V, RG=3.3, ID=15A | 2 | ||
| Input Capacitance | Ciss | 814 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 498 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 41 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 15 | nS | IF=20A, di/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 25 | nC | IF=20A, di/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
NTMFS4C08N-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
ntmfs4c08n-hxy-etched.step/ntmfs4c08n-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntmfs4c08n-hxy.step/ntmfs4c08n-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
b4330743f7f3c1db, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).