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SI4485DY-T1-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI4485DY-T1-GE3

Vishay Intertech · MOSFETs · SOP-8

SI4485DY-T1-GE3 from Vishay Intertech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -30 V.
2 S passive Source terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -30 V.
3 S passive Source terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -30 V.
4 G input Gate terminal of the P-channel MOSFET; gate-source voltage is limited to ±20 V.
5 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is -30 V and continuous drain current is -6 A at TC = 25 °C.
6 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is -30 V and continuous drain current is -6 A at TC = 25 °C.
7 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is -30 V and continuous drain current is -6 A at TC = 25 °C.
8 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is -30 V and continuous drain current is -6 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V TA = 25 °C, unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -6 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -5.9 A TA = 25 °C, t ≤ 10 s 1
Continuous Drain Current ID -4.7 A TA = 70 °C, t ≤ 10 s 1
Pulsed Drain Current IDM -25 A 1
Continuous Source-Drain Diode Current IS -4.2 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -2 A TA = 25 °C, t ≤ 10 s 1
Maximum Power Dissipation PD 5 W TC = 25 °C 1
Maximum Power Dissipation PD 3.2 W TC = 70 °C 1
Maximum Power Dissipation PD 2.4 W TA = 25 °C, t ≤ 10 s 1
Maximum Power Dissipation PD 1.5 W TA = 70 °C, t ≤ 10 s 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 42 53 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient RthJA 85 °C/W Steady state (note d) 1
Maximum Junction-to-Foot (Drain) RthJF 19 25 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1.2 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -25 A VDS ≤ -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.035 0.042 Ω VGS = -10 V, ID = -5.9 A 2
Drain-Source On-State Resistance RDS(on) 0.06 0.072 Ω VGS = -4.5 V, ID = -4.5 A 2
Gate Resistance Rg 1 5 10 Ω f = 1 MHz 2
Total Gate Charge Qg 13.6 21 nC VDS = -15 V, VGS = -10 V, ID = -5.9 A 2
Total Gate Charge Qg 7 11 nC VDS = -15 V, VGS = -4.5 V, ID = -5.9 A 2
Turn-On Delay Time td(on) 30 45 ns VDD = -15 V, RL = 3.2 Ω, ID ≅ -4.7 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 25 38 ns VDD = -15 V, RL = 3.2 Ω, ID ≅ -4.7 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 16 24 ns VDD = -15 V, RL = 3.2 Ω, ID ≅ -4.7 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 8 16 ns VDD = -15 V, RL = 3.2 Ω, ID ≅ -4.7 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 8 16 ns VDD = -15 V, RL = 3.2 Ω, ID ≅ -4.7 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 10 20 ns VDD = -15 V, RL = 3.2 Ω, ID ≅ -4.7 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 18 27 ns VDD = -15 V, RL = 3.2 Ω, ID ≅ -4.7 A, VGEN = -10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -4.2 A TC = 25 °C 2
Pulse Diode Forward Current ISM -25 A 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -4.7 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 17 26 ns IF = -4.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 9 18 nC IF = -4.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI4485DY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: si4485dy-t1-ge3-etched.step / si4485dy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4485dy-t1-ge3.step / si4485dy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 1f5763dd1bc18474, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF