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Contents

README

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LM2904AVQDR

Texas Instruments · Operational Amplifier · SOIC-8

LM2904AVQDR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT1 output Output of op-amp channel 1. Class-AB output stage capable of sinking/sourcing loads to V- (ground in single-supply operation). Short-circuit to V- allowed indefinitely for VS ≤ 15 V at TA = 25 °C.
2 IN1- input Inverting (negative) input of op-amp channel 1. High-impedance BJT input; differential input voltage rated ±32 V (VID). Input voltage range -0.3 V to 32 V.
3 IN1+ input Non-inverting (positive) input of op-amp channel 1. Common-mode input range includes V- (ground), enabling ground sensing in single-supply operation.
4 V- power_in Negative (lowest) supply rail, or ground for single-supply operation. Supply span (V+) - (V-) rated up to 32 V for the AV/A variants (26 V absolute max on plain LM2904).
5 IN2+ input Non-inverting (positive) input of op-amp channel 2. Common-mode input range includes V- (ground).
6 IN2- input Inverting (negative) input of op-amp channel 2. High-impedance BJT input; differential input voltage rated ±32 V.
7 OUT2 output Output of op-amp channel 2. Class-AB output stage capable of sinking/sourcing loads to V- (ground in single-supply operation).
8 V+ power_in Positive (highest) supply rail. Recommended supply range 3 V to 32 V (LM2904AV); absolute-maximum total supply is 32 V.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOIC-8
Category Op-amp/Cmp
Pins 8

Ordering variants

Same part, different packaging or reel option.

  • LM2904AVQDRD
  • LM2904AVQDR
  • LM2904AVQDRPW
  • LM2904AVQDRPWR

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input offset voltage VOS 1 2 mV VS = 5 V to maximum; VCM = 0 V; VO = 1.4 V; A-suffix devices 11
Input offset voltage VOS 4 mV A-suffix devices; TA = –40°C to 125°C 11
Input offset voltage vs power supply (PSRR) PSRR 65 100 dB VS = 5 V to 30 V 11
Common-mode rejection ratio CMRR 65 80 dB VS = 5 V to maximum; VCM = 0 V 11
Open-loop voltage gain AOL 25 100 V/mV VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ 11
Open-loop voltage gain AOL 15 V/mV VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ; TA = –40°C to 125°C 11
Input bias current IB -20 -250 nA VO = 1.4 V 11
Input bias current IB -500 nA VO = 1.4 V; TA = –40°C to 125°C 11
Input offset current IOS 2 50 nA VO = 1.4 V; V-suffix device 11
Input offset current IOS 150 nA VO = 1.4 V; V-suffix device; TA = –40°C to 125°C 11
Output current, source IO -20 -30 mA VS = 15 V; VO = 0 V; VID = 1 V; source 11
Output current, source IO -10 mA VS = 15 V; VO = 0 V; VID = 1 V; source; TA = –40°C to 125°C 11
Output current, sink IO 10 20 mA VS = 15 V; VO = 15 V; VID = –1 V; sink 11
Output current, sink IO 5 mA VS = 15 V; VO = 15 V; VID = –1 V; sink; TA = –40°C to 125°C 11
Quiescent current per amplifier IQ 350 600 µA VO = 2.5 V; IO = 0 A; TA = –40°C to 125°C 11
Quiescent current per amplifier IQ 500 1000 µA VS = maximum; VO = maximum / 2; IO = 0 A 11
Short-circuit current ISC -60 40 60 mA VS = 10 V; VO = VS / 2 11
Voltage output swing from positive rail VO 6 V VS = maximum; RL = 2 kΩ; V-suffix device 11
Voltage output swing from positive rail VO 4 5 V VS = maximum; RL ≥ 10 kΩ; V-suffix device 11
Voltage output swing from negative rail VO 5 20 mV VS = 5 V; RL ≤ 10 kΩ; TA = –40°C to 125°C 11
Output current at 200 mV from negative rail IO 12 40 µA VID = –1 V; VO = 200 mV; V-suffix device 11
Supply voltage VS 32 V VS = (V+) – (V–); LM2904V 6
Differential input voltage VID -32 32 V LM2904V; differential voltage at IN+ with respect to IN– 6
Input voltage, either input VI -0.3 32 V LM2904V 6
Operating ambient temperature TA -40 125 °C LM2904V 6
Operating virtual-junction temperature TJ 150 °C 6
Storage temperature Tstg -65 150 °C 6
Electrostatic discharge, human-body model V(ESD) -500 500 V HBM per ANSI/ESDA/JEDEC JS-001; LM2904V group 6
Electrostatic discharge, charged-device model V(ESD) -1000 1000 V CDM per JEDEC JESD22-C101; LM2904V group 6
Supply voltage VS 3 30 V VS = (V+) – (V–); LM2904V 7
Operating ambient temperature TA -40 125 °C LM2904V 7
Junction-to-ambient thermal resistance RθJA 124.7 °C/W D (SOIC) package 7
Junction-to-case (top) thermal resistance RθJC(top) 66.9 °C/W D (SOIC) package 7
Junction-to-board thermal resistance RθJB 67.9 °C/W D (SOIC) package 7

CAD (KiCad official)

  • Symbol: LM2904AVQDR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: lm2904avqdr-etched.step / lm2904avqdr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lm2904avqdr.step / lm2904avqdr.glb are the bare package body.

3D model downloads

Two STEP files. Same geometry, different body top:

File Size Use it when
lm2904avqdr.step 122 KB You want the bare part, or you mark your own boards.
lm2904avqdr-etched.step 2.1 MB You want the part with LM2904AVQDR already on it.

The marking in the etched file is real recessed geometry cut into the solid, not a texture or a decal: 532 faces against 147 in the bare model. It survives export, section views, and rendering in any CAD tool, and it drops straight into KiCad or Fusion with no extra setup.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (56 pp, sha256 c15277a33a04f41f, retrieved 2026-08-17, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF