component

CMB044N10

Public Made by Adom

by adom

Cmos MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorcmb044n10factory-2.0.0extractor-text
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

CMB044N10

Cmos · MOSFETs · TO-263

CMB044N10 from Cmos, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage rated ±20 V, with threshold of 2 to 4 V at ID=250uA.
2 D passive Drain; drain-source voltage rated 100 V with continuous drain current of 160 A at TC=25℃.
3 S passive Source; continuous source (body-diode) current of 160 A and pulsed source current of 640 A.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 160 A TC=25℃ 1
Continuous Drain Current ID 115 A TC=100℃ 1
Pulsed Drain Current IDM 640 A 1
Single Pulse Avalanche Energy EAS 1330 mJ VDS=50V, VGS=10V, L=1mH, IAS=51.6A 1
Total Power Dissipation PD 260 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62.5 ℃/W 1
Thermal Resistance Junction-case RθJC 0.48 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 4.4 4.9 mΩ VGS=10V, ID=20A 2
Gate Threshold Voltage VGS(th) 2 4 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=100V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 160 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 640 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.4 V VGS=0V, IS=50A, TJ=25℃ 2
Forward Transconductance gfs 16 S VDS=10V, ID=20A 2
Gate Resistance Rg 4.2 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 90 nC 2
Gate-Source Charge Qgs 30 nC 2
Gate-Drain Charge Qgd 15 nC 2
Turn-On Delay Time Td(on) 33 ns 2
Rise Time Tr 35 ns 2
Turn-Off Delay Time Td(off) 60 ns 2
Fall Time Tf 14 ns 2
Input Capacitance Ciss 6700 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 2300 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 60 pF VDS=25V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: CMB044N10
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: cmb044n10-etched.step / cmb044n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmb044n10.step / cmb044n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (5 pp, sha256 36c73993784eb15a, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF