component
FKBA4903
Public Made by Adomby adom
SINO IC MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFKBA4903
SINO IC · MOSFETs · DFN-8(5x6)
FKBA4903 from SINO IC, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; the datasheet gives VDS of 40V (N-channel) or -40V (P-channel) and VGS of ±20V. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage is rated ±20V and the device is ESD protected. |
| 3 | S2 | passive | Source of MOSFET 2; the datasheet gives VDS of 40V (N-channel) or -40V (P-channel) and VGS of ±20V. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage is rated ±20V and the device is ESD protected. |
| 5 | D2 | passive | Drain of MOSFET 2, tied to pin 6 and the D2 exposed pad; drain-source voltage is rated 40V (N-channel) or -40V (P-channel). |
| 6 | D2 | passive | Drain of MOSFET 2, tied to pin 5 and the D2 exposed pad; drain-source voltage is rated 40V (N-channel) or -40V (P-channel). |
| 7 | D1 | passive | Drain of MOSFET 1, tied to pin 8 and the D1 exposed pad; drain-source voltage is rated 40V (N-channel) or -40V (P-channel). |
| 8 | D1 | passive | Drain of MOSFET 1, tied to pin 7 and the D1 exposed pad; drain-source voltage is rated 40V (N-channel) or -40V (P-channel). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Channel Drain-Source Voltage | VDS | 40 | V | 1 | |||
| P-Channel Drain-Source Voltage | VDS | -40 | V | 1 | |||
| N-Channel Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| P-Channel Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| N-Channel Drain Current, Continuous | ID | 26 | A | Continuous | 1 | ||
| P-Channel Drain Current, Continuous | ID | -25 | A | Continuous | 1 | ||
| N-Channel Drain Current, Pulsed | ID | 47 | A | Pulsed | 1 | ||
| P-Channel Drain Current, Pulsed | ID | -46 | A | Pulsed | 1 | ||
| Total Power Dissipation (N and P channel, printed as one row) | PD | 35.7 | W | @TA=25℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| N-Channel Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS= VGS, ID=250μA | 2 |
| N-Channel Static Drain-Source On-Resistance | RDS(ON) | 25 | 30 | mΩ | VGS=10V, ID=12A | 2 | |
| N-Channel Static Drain-Source On-Resistance | RDS(ON) | 30 | 50 | mΩ | VGS=4.5V, ID=10A | 2 | |
| P-Channel Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VDS=VGS, ID=250μA | 3 | |
| P-Channel Static Drain-Source On-Resistance | RDS(ON) | 30 | 45 | mΩ | VGS=-10V, ID=-8A | 3 | |
| P-Channel Static Drain-Source On-Resistance | RDS(ON) | 55 | 70 | mΩ | VGS=-4.5V, ID=-4A | 3 | |
| N-Channel Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250μA, | 2 | ||
| N-Channel Drain to Source Leakage Current | IDSS | 1 | μA | VDS=32V, VGS=0V | 2 | ||
| N-Channel Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20 V | 2 | ||
| N-Channel Forward Transconductance | gFS | 8 | S | VDS=5V, ID=12A | 2 | ||
| N-Channel Input Capacitance | Ciss | 593 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| N-Channel Output Capacitance | Coss | 76 | pF | 2 | |||
| N-Channel Reverse Transfer Capacitance | Crss | 56 | pF | 2 | |||
| N-Channel Total Gate Charge | Qg | 5.5 | nC | VGS=4.5V, VDD=20V, ID=12A | 2 | ||
| N-Channel Gate Source Charge | Qgs | 1.25 | nC | 2 | |||
| N-Channel Gate Drain Charge | Qgd | 2.5 | nC | 2 | |||
| N-Channel Turn-On Delay Time | td(on) | 8.9 | ns | VDD=20V, RGEN=3.3Ω, ID=1A | 2 | ||
| N-Channel Turn-Off Delay Time | td(off) | 41 | ns | 2 | |||
| N-Channel Turn-On Rise Time | td(r) | 2.2 | ns | 2 | |||
| N-Channel Turn-Off Fall Time | td(f) | 2.7 | ns | 2 | |||
| N-Channel Drain-Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=1A | 2 | ||
| N-Channel Continuous Source Current | IS | 23 | A | VG=VD=0V | 2 | ||
| N-Channel Pulsed Source Current | ISM | 46 | A | 2 | |||
| P-Channel Drain-Source Breakdown Voltage | BVDSS | -40 | V | ID=-250μA, VGS=0V | 3 | ||
| P-Channel Drain to Source Leakage Current | IDSS | 1 | μA | VDS=-32V, VGS=0V | 3 | ||
| P-Channel Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20V | 3 | ||
| P-Channel Forward Transconductance | gFS | 12.6 | S | VDS=-5V, ID=-8A | 3 | ||
| P-Channel Input Capacitance | Ciss | 1004 | pF | VGS=0V, VDS=-15V, f=1MHz | 3 | ||
| P-Channel Output Capacitance | Coss | 108 | pF | 3 | |||
| P-Channel Reverse Transfer Capacitance | Crss | 80 | pF | 3 | |||
| P-Channel Total Gate Charge | Qg | 9 | nC | VGS=-4.5V, VDS=-20V, ID=-12A | 3 | ||
| P-Channel Gate Source Charge | Qgs | 2.54 | nC | 3 | |||
| P-Channel Gate Drain Charge | Qgd | 3.1 | nC | 3 | |||
| P-Channel Turn-On Delay Time | td(on) | 19.2 | ns | VGS=-10V, VDS=-15V, RGEN=3.3Ω, ID=-1A | 3 | ||
| P-Channel Turn-Off Delay Time | td(off) | 48.6 | ns | 3 | |||
| P-Channel Turn-On Rise Time | td(r) | 12.8 | ns | 3 | |||
| P-Channel Turn-Off Fall Time | td(f) | 4.6 | ns | 3 | |||
| P-Channel Drain-Source Diode Forward Voltage | VSD | -1 | V | VGS=0V,IS=-1A | 3 | ||
| P-Channel Continuous Source Current | IS | -20 | A | VG=VD=0V | 3 | ||
| P-Channel Pulsed Source Current | ISM | -40 | A | 3 |
CAD (KiCad official)
- Symbol:
FKBA4903 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
fkba4903-etched.step/fkba4903-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fkba4903.step/fkba4903.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (8 pp, sha256
327d97126184c96b, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).