component
PS2561D-1Y-A
Public Made by Adomby adom
RENESAS Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPS2561D-1Y-A
RENESAS · Transistor, Photovoltaic Output Optoisolators · DIP-4
PS2561D-1Y-A from RENESAS, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Anode | passive | Anode of the GaAs input LED; forward current IF max 40 mA DC (1 A peak, PW=100 µs, duty 1%) and reverse voltage VR max 6 V. |
| 2 | Cathode | passive | Cathode of the GaAs input LED; shorted with pin 1 for the 5 000 Vr.m.s. isolation test between input and output. |
| 3 | Emitter | passive | Emitter of the NPN silicon phototransistor; emitter to collector voltage VECO max 7 V. |
| 4 | Collector | passive | Collector of the NPN silicon phototransistor; VCEO max 80 V and collector current IC max 50 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RENESAS |
| Package | DIP-4 |
| Category | Optoisolators |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Diode Forward Voltage | VF | 1.2 | 1.4 | V | IF = 10 mA | 5 | |
| Reverse Current | IR | 5 | µA | VR = 5 V | 5 | ||
| Terminal Capacitance | Ct | 10 | pF | V = 0 V, f = 1.0 MHz | 5 | ||
| Collector to Emitter Dark Current | ICEO | 100 | nA | VCE = 48 V, IF = 0 mA | 5 | ||
| Coupled Current Transfer Ratio (IC/IF) | CTR | 50 | 160 | 400 | % | IF = 5 mA, VCE = 5 V | 5 |
| Coupled Current Transfer Ratio (IC/IF) | CTR | 10 | 80 | % | IF = 1 mA, VCE = 5 V | 5 | |
| Collector Saturation Voltage | VCE(sat) | 0.3 | V | IF = 10 mA, IC = 2 mA | 5 | ||
| Isolation Capacitance | CI-O | 0.5 | pF | V = 0 V, f = 1.0 MHz | 5 | ||
| Rise Time | tr | 3 | µs | VCC = 10 V, IC = 2 mA, RL = 100 Ω | 5 | ||
| Fall Time | tf | 5 | µs | VCC = 10 V, IC = 2 mA, RL = 100 Ω | 5 | ||
| Diode Reverse Voltage | VR | 6 | V | TA = 25°C | 4 | ||
| Forward Current (DC) | IF | 40 | mA | TA = 25°C | 4 | ||
| Power Dissipation Derating (diode) | PD/°C | 1.5 | mW/°C | TA = 25°C | 4 | ||
| Diode Power Dissipation | PD | 150 | mW | TA = 25°C | 4 | ||
| Peak Forward Current | IFP | 1 | A | PW = 100 µs, Duty Cycle = 1% | 4 | ||
| Collector to Emitter Voltage | VCEO | 80 | V | TA = 25°C | 4 | ||
| Emitter to Collector Voltage | VECO | 7 | V | TA = 25°C | 4 | ||
| Collector Current | IC | 50 | mA | TA = 25°C | 4 | ||
| Power Dissipation Derating (transistor) | PC/°C | 1.5 | mW/°C | TA = 25°C | 4 | ||
| Transistor Power Dissipation | PC | 150 | mW | TA = 25°C | 4 | ||
| Isolation Voltage | BV | 5000 | Vr.m.s. | AC 1 minute, TA = 25°C, RH = 60%, input-output, pins 1-2 shorted, 3-4 shorted | 4 | ||
| Operating Ambient Temperature | TA | -55 | 110 | °C | 4 | ||
| Storage Temperature | Tstg | -55 | 150 | °C | 4 |
CAD (KiCad official)
- Symbol:
PS2561D-1Y-A - Footprint:
Package_DIP:DIP-4_W7.62mm - 3D model: DIP-4 (KiCad packages3D, STEP)
- 3D model files:
ps2561d-1y-a-etched.step/ps2561d-1y-a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ps2561d-1y-a.step/ps2561d-1y-a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: RENESAS datasheet (18 pp, sha256
04ff39dc9544e695, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).