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NCE4953

Public Made by Adom

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Wuxi NCE Power Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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NCE4953

Wuxi NCE Power Semiconductor · MOSFETs · SOP-8

NCE4953 from Wuxi NCE Power Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1, rated VDS -30V and ID -5.1A.
2 G1 input Gate of MOSFET 1, with VGS limit of ±20V and RDS(ON) specified at VGS=-4.5V and -10V.
3 S2 passive Source of P-channel MOSFET 2, rated VDS -30V and ID -5.1A.
4 G2 input Gate of MOSFET 2, with VGS limit of ±20V and RDS(ON) specified at VGS=-4.5V and -10V.
5 D2 passive Drain of MOSFET 2, tied internally to pin 6, with pulsed drain current up to -20A.
6 D2 passive Drain of MOSFET 2, tied internally to pin 5, with pulsed drain current up to -20A.
7 D1 passive Drain of MOSFET 1, tied internally to pin 8, with pulsed drain current up to -20A.
8 D1 passive Drain of MOSFET 1, tied internally to pin 7, with pulsed drain current up to -20A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID -5.1 A 1
Drain Current-Pulsed (Note 1) IDM -20 A Repetitive rating: pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 2.5 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 50 ℃/W Surface mounted on FR4 Board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS -30 -33 V VGS=0V ID=-250μA 1
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-24V,VGS=0V 1
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.6 -3 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 43 55 mΩ VGS=-10V, ID=-5.1A 2
Drain-Source On-State Resistance RDS(ON) 62 90 mΩ VGS=-4.5V, ID=-4.2A 2
Forward Transconductance gFS 4 7 S VDS=-15V,ID=-4.5A 2
Diode Forward Voltage (Note 3) VSD -1.2 V VGS=0V,IS=-5.1A 2

CAD (KiCad official)

  • Symbol: NCE4953
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: nce4953-etched.step / nce4953-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce4953.step / nce4953.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 30ac150c7cd653ba, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF