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DS16EV5110ASQE
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Texas Instruments Video Interface ICs, WQFN-48-EP(7x7). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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Symbol & Footprint
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README
markdownDS16EV5110ASQE
Texas Instruments · Video Interface ICs · WQFN-48-EP(7x7)
DS16EV5110ASQE from Texas Instruments, in a WQFN-48-EP(7x7). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C_IN- | input | Inverting TMDS clock input (CML) to the equalizer, with an on-chip 50Ω terminating resistor to VDD. |
| 2 | C_IN+ | input | Non-inverting TMDS clock input (CML) to the equalizer, with an on-chip 50Ω terminating resistor to VDD. |
| 3 | VDD | power_in | Power supply pin, tied to the VDD plane through a low-inductance path with a 0.1µF bypass capacitor to GND. |
| 4 | D_IN0- | input | Inverting TMDS data channel 0 input (CML) with an on-chip 50Ω terminating resistor to VDD. |
| 5 | D_IN0+ | input | Non-inverting TMDS data channel 0 input (CML) with an on-chip 50Ω terminating resistor to VDD. |
| 6 | VDD | power_in | Power supply pin, tied to the VDD plane through a low-inductance path with a 0.1µF bypass capacitor to GND. |
| 7 | VDD | power_in | Power supply pin, tied to the VDD plane through a low-inductance path with a 0.1µF bypass capacitor to GND. |
| 8 | D_IN1- | input | Inverting TMDS data channel 1 input (CML) with an on-chip 50Ω terminating resistor to VDD. |
| 9 | D_IN1+ | input | Non-inverting TMDS data channel 1 input (CML) with an on-chip 50Ω terminating resistor to VDD. |
| 10 | VDD | power_in | Power supply pin, tied to the VDD plane through a low-inductance path with a 0.1µF bypass capacitor to GND. |
| 11 | D_IN2- | input | Inverting TMDS data channel 2 input (CML) with an on-chip 50Ω terminating resistor to VDD. |
| 12 | D_IN2+ | input | Non-inverting TMDS data channel 2 input (CML) with an on-chip 50Ω terminating resistor to VDD. |
| 13 | VDD | power_in | Power supply pin, tied to the VDD plane through a low-inductance path with a 0.1µF bypass capacitor to GND. |
| 14 | BST_1 | input | LVCMOS equalizer boost select bit 1 (BST_[0:2] select boost level, internally pulled Low). |
| 15 | VDD | power_in | Power supply pin, tied to the VDD plane through a low-inductance path with a 0.1µF bypass capacitor to GND. |
| 16 | CS | input | SMBus chip select: High enables the SMBus register, Low disables it; internally pulled Low and gated with SDC. |
| 17 | SDC | input | SMBus clock input, 3.3V LVCMOS (not 5V tolerant), internally pulled High to 3.3V with a High-Z pull-up. |
| 18 | SDA | bidirectional | SMBus data input/output, 3.3V LVCMOS (not 5V tolerant), internally pulled High to 3.3V with a High-Z pull-up. |
| 19 | Reserv | unconnected | Reserved; do not connect. |
| 20 | Reserv | unconnected | Reserved; do not connect. |
| 21 | FEB | input | Force External Boost: High selects boost control by BST_[0:2] pins, Low selects SMBus control; internally pulled High. |
| 22 | GND | power_in | Ground reference, tied to a solid ground plane through a low-impedance path. |
| 23 | BST_0 | input | LVCMOS equalizer boost select bit 0 (BST_[0:2] select boost level, internally pulled Low). |
| 24 | GND | power_in | Ground reference, tied to a solid ground plane through a low-impedance path. |
| 25 | D_OUT2+ | output | Non-inverting TMDS data channel 2 output (CML, open collector). |
| 26 | D_OUT2- | output | Inverting TMDS data channel 2 output (CML, open collector). |
| 27 | GND | power_in | Ground reference, tied to a solid ground plane through a low-impedance path. |
| 28 | D_OUT1+ | output | Non-inverting TMDS data channel 1 output (CML, open collector). |
| 29 | D_OUT1- | output | Inverting TMDS data channel 1 output (CML, open collector). |
| 30 | GND | power_in | Ground reference, tied to a solid ground plane through a low-impedance path. |
| 31 | GND | power_in | Ground reference, tied to a solid ground plane through a low-impedance path. |
| 32 | D_OUT0+ | output | Non-inverting TMDS data channel 0 output (CML, open collector). |
| 33 | D_OUT0- | output | Inverting TMDS data channel 0 output (CML, open collector). |
| 34 | GND | power_in | Ground reference, tied to a solid ground plane through a low-impedance path. |
| 35 | C_OUT+ | output | Non-inverting TMDS clock output (CML, open collector). |
| 36 | C_OUT- | output | Inverting TMDS clock output (CML, open collector). |
| 37 | BST_2 | input | LVCMOS equalizer boost select bit 2 (BST_[0:2] select boost level, internally pulled Low). |
| 38 | Reserv | unconnected | Reserved; do not connect. |
| 39 | Reserv | unconnected | Reserved; do not connect. |
| 40 | Reserv | unconnected | Reserved; do not connect. |
| 41 | Reserv | unconnected | Reserved; do not connect. |
| 42 | Reserv | unconnected | Reserved; do not connect. |
| 43 | Reserv | unconnected | Reserved; do not connect. |
| 44 | EN | input | Enable input, global to all channels: High selects normal operation, Low selects standby mode; internally pulled High. |
| 45 | SD | output | LVCMOS clock channel signal detect output, High when a signal is detected. |
| 46 | VDD | power_in | Power supply pin, tied to the VDD plane through a low-inductance path with a 0.1µF bypass capacitor to GND. |
| 47 | Reserv | unconnected | Reserved; do not connect. |
| 48 | Reserv | unconnected | Reserved; do not connect. |
| 49 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WQFN-48-EP(7x7) |
| Category | Interface |
| Pins | 49 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Voltage (VDD to GND) | 3 | 3.3 | 3.6 | V | 4 | ||
| Ambient Temperature | -40 | 25 | 85 | °C | 4 | ||
| Supply Voltage (VDD) | -0.5 | 4 | V | 4 | |||
| LVCMOS Input Voltage | -0.5 | 4 | V | 4 | |||
| LVCMOS Output Voltage | -0.5 | 4 | V | 4 | |||
| CML Input/Output Voltage | -0.5 | 4 | V | 4 | |||
| Junction Temperature | 150 | °C | 4 | ||||
| Storage Temperature | -65 | 150 | °C | 4 | |||
| Lead Temperature (Soldering, 5 sec.) | 260 | °C | Soldering, 5 sec. | 4 | |||
| ESD Rating | 6 | kV | HBM, 1.5 kΩ, 100 pF | 4 | |||
| Thermal Resistance | θJA | 30 | °C/W | No Airflow | 4 | ||
| High Level Input Leakage Current (pull-up pins) | IIH-PU | -10 | 10 | µA | LVCMOS pins with internal pull-up resistors | 4 | |
| High Level Input Leakage Current (pull-down pins) | IIH-PD | 80 | 105 | µA | LVCMOS pins with internal pull-down resistors | 4 | |
| Low Level Input Leakage Current (pull-up pins) | IIL-PU | -20 | -10 | µA | LVCMOS pins with internal pull-up resistors | 4 | |
| Low Level Input Leakage Current (pull-down pins) | IIL-PD | -10 | 10 | µA | LVCMOS pins with internal pull-down resistors | 4 | |
| High Level Input Voltage | VIH | 2 | V | 4 | |||
| Low Level Input Voltage | VIL | 0 | 0.8 | V | 4 | ||
| High Level Output Voltage | VOH | 2.4 | V | SD Pin, IOH = -3mA | 4 | ||
| Low Level Output Voltage | VOL | 0.4 | V | SD Pin, IOL = 3mA | 4 | ||
| Power Dissipation | PD | 475 | 700 | mW | EN = High, Device Enabled | 4 | |
| Input Voltage Swing (Launch Amplitude) | VTX | 800 | 1200 | mVP-P | Measured differentially at TPA (Figure 2) | 5 | |
| Input Resistance | RIN | 45 | 50 | 55 | Ω | IN+ to VDD and IN− to VDD | 5 |
| Output Voltage Swing | VO | 800 | 1200 | mVP-P | Measured differentially with OUT+ and OUT− terminated by 50Ω to VDD | 5 | |
| Output Leakage Current | IOFF | -1 | 1 | µA | VOUT = 3.6V, VDD = open or 0V | 5 | |
| Transition Time | tR, tF | 75 | 240 | ps | 20% to 80% of differential output voltage, measured within 1" from output pins. | 5 | |
| Total Jitter at 1.65 Gbps | TJ1 | 0.13 | 0.17 | UIP-P | 20m 28 AWG STP DVI Cable, EQ Setting 0x04, PRBS7 | 5 | |
| Clock Frequency | FCLK | 25 | 225 | MHz | Clock Path | 5 | |
| Bit Rate | BR | 0.25 | 2.25 | Gbps | Data Path | 5 | |
| Data, Clock Input High Voltage (SMBus) | VIH | 2.8 | V | 6 | |||
| Nominal Bus Voltage | VDD | 3 | 3.6 | V | 6 | ||
| Input Leakage per bus segment | ILEAK-Bus | -200 | 200 | µA | per bus segment | 6 | |
| Bus Operating Frequency | FSMB | 10 | 100 | kHz | 6 | ||
| Detect Clock Low Timeout | TTIMEOUT | 25 | 35 | ms | 6 | ||
| Clock High Period | THIGH | 4 | 50 | µs | 6 |
CAD (KiCad official)
- Symbol:
DS16EV5110ASQE - Footprint:
Package_DFN_QFN:QFN-48-1EP_7x7mm_P0.5mm_EP5.15x5.15mm - 3D model: WQFN-48-EP(7x7) (KiCad packages3D, STEP)
- 3D model files:
ds16ev5110asqe-etched.step/ds16ev5110asqe-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ds16ev5110asqe.step/ds16ev5110asqe.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (25 pp, sha256
8197f99e1a4a9be5, retrieved 2026-11-10, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).