component
PNMT30V6
Public Made by Adomby adom
Shanghai Prisemi Elec MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPNMT30V6
Shanghai Prisemi Elec · MOSFETs · SOT-23
PNMT30V6 from Shanghai Prisemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet gives VGS(th) of 0.7 V min and 1.5 V typ at VDS = VGS, ID = 250 µA, and a gate-source voltage rating of ±12 V. |
| 2 | S | passive | Source of the N-channel MOSFET; the datasheet gives a gate-source voltage rating of ±12 V and a maximum drain-source voltage of 30 V. |
| 3 | D | passive | Drain of the N-channel MOSFET; the datasheet gives a drain-source voltage of 30 V, continuous drain current of 5.8 A, and pulsed drain current of 30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shanghai Prisemi Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID =250μA,VGS=0V | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS =20V,VGS=0V | 1 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS =0V,VGS=±12V | 1 | |
| Gate Threshold Voltage | VGS(th) | 0.7 | 1.5 | V | VDS =VGS, ID =250μA | 1 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.03 | 0.04 | Ω | VGS=10V, ID =5.8A | 1 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.04 | 0.048 | Ω | VGS=4.5V, ID =5A | 1 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.05 | 0.058 | Ω | VGS=2.5V, ID =4A | 1 | |
| Drain-Source Voltage | VDS | 30 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Continuous Drain Current | ID | 5.8 | A | 2 | |||
| Pulsed Drain Current | ID | 30 | A | 2 | |||
| Total Power Dissipation | PD | 1.4 | W | TA=25℃ | 2 | ||
| Total Power Dissipation | PD | 1 | W | TA=70℃ | 2 |
CAD (KiCad official)
- Symbol:
PNMT30V6 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pnmt30v6-etched.step/pnmt30v6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pnmt30v6.step/pnmt30v6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shanghai Prisemi Elec datasheet (4 pp, sha256
e7e852dd07472881, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).