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STD7NM80-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTD7NM80-VB
VBsemi Elec · MOSFETs · TO-252
STD7NM80-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±20 V (absolute maximum), threshold VGS(th) 2.0 to 4.0 V at ID = 250 μA, with 10 V used for the RDS(on) rating. |
| 2 | D | passive | Drain (also the case/tab connection); rated for VDS of 800 V with continuous ID of 5 A at TC = 25 °C and pulsed IDM of 21 A. |
| 3 | S | passive | Source; carries continuous body-diode current IS of 5.0 A and pulsed ISM of 21 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 800 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 5 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 3.9 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 21 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 770 | mJ | VDD = 50 V, TJ = 25 °C, L = 23 mH, IAS = 7.8 A | 1 | ||
| Repetitive Avalanche Current | IAR | 7.8 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 19 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 190 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 2 | V/ns | ISD ≤ 7.8 A, dI/dt ≤ 140 A/μs, VDD ≤ 600 V, TJ ≤ 150 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Peak Temperature | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 40 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 0.65 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 800 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS = 800 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 500 | μA | VDS = 640 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 1.2 | Ω | VGS = 10 V, ID = 3.7 A | 2 | ||
| Forward Transconductance | gfs | 5.6 | S | VDS = 100 V, ID = 3.7 A | 2 | ||
| Total Gate Charge | Qg | 200 | nC | VGS = 10 V, ID = 3.8 A, VDS = 400 V | 2 | ||
| Gate-Source Charge | Qgs | 24 | nC | VGS = 10 V, ID = 3.8 A, VDS = 400 V | 2 | ||
| Gate-Drain Charge | Qgd | 110 | nC | VGS = 10 V, ID = 3.8 A, VDS = 400 V | 2 | ||
| Continuous Source-Drain Diode Current | IS | 5 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 21 | A | 2 | |||
| Body Diode Voltage | VSD | 1.8 | V | TJ = 25 °C, IS = 3.8 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 50 | 980 | ns | TJ = 25 °C, IF = 3.8 A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 3.8 | 5.7 | μC | TJ = 25 °C, IF = 3.8 A, dI/dt = 100 A/μs | 2 | |
| VDS Temperature Coefficient | ΔVDS/TJ | 0.98 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Input Capacitance | Ciss | 3100 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 800 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 490 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 19 | ns | VDD = 400 V, ID = 3.8 A, Rg = 6.2 Ω, RD = 52 Ω | 2 | ||
| Rise Time | tr | 38 | ns | VDD = 400 V, ID = 3.8 A, Rg = 6.2 Ω, RD = 52 Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 120 | ns | VDD = 400 V, ID = 3.8 A, Rg = 6.2 Ω, RD = 52 Ω | 2 | ||
| Fall Time | tf | 39 | ns | VDD = 400 V, ID = 3.8 A, Rg = 6.2 Ω, RD = 52 Ω | 2 | ||
| Case-to-Sink Thermal Resistance | RthCS | 0.24 | °C/W | Flat, greased surface | 2 |
CAD (KiCad official)
- Symbol:
STD7NM80-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
std7nm80-vb-etched.step/std7nm80-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);std7nm80-vb.step/std7nm80-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
18583edefb92af2d, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).