IPN60R1K5PFD7SATMA1 from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Gate	input	Gate control terminal with static gate-source voltage limited to -20 V to 20 V and dynamic limit of -30 V to 30 V (AC f>1 Hz), and gate threshold voltage of 3.5 V to 4.5 V.
2	Drain	passive	Drain terminal rated for continuous drain current of 3.6 A at TC=25°C, with a drain-source breakdown voltage of 600 V minimum.
3	Source	passive	Source terminal is the reference for the gate-source voltage limits and the return path for the drain current.

Key specifications

Parameter	Value
Manufacturer	Infineon Technologies
Package	SOT-223
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Continuous drain current	ID			3.6	A	TC=25°C	3
Continuous drain current	ID			2.2	A	TC=100°C	3
Pulsed drain current	ID,pulse			6	A	TC=25°C	3
Avalanche energy, single pulse	EAS			7	mJ	ID=0.7A; VDD=50V; see table 10	3
Avalanche energy, repetitive	EAR			0.04	mJ	ID=0.7A; VDD=50V; see table 10	3
Avalanche current, single pulse	IAS			0.7	A		3
MOSFET dv/dt ruggedness	dv/dt			120	V/ns	VDS=0...400V	3
Gate source voltage (static)	VGS	-20		20	V	static;	3
Gate source voltage (dynamic)	VGS	-30		30	V	AC (f>1 Hz)	3
Power dissipation	Ptot			6	W	TC=25°C	3
Storage temperature	Tstg	-40		150	°C		3
Operating junction temperature	Tj	-40		150	°C		3
Continuous diode forward current	IS			3.6	A	TC=25°C	3
Diode pulse current	IS,pulse			6	A	TC=25°C	3
Reverse diode dv/dt	dv/dt			70	V/ns	VDS=0...400V,ISD<=2.5A,Tj=25°C	3
Maximum diode commutation speed	diF/dt			1300	A/µs	VDS=0...400V,ISD<=2.5A,Tj=25°C	3
Thermal resistance, junction - solder point	RthJS			19.73	°C/W		4
Thermal resistance, junction - ambient	RthJA			160	°C/W	device on PCB, minimal footprint	4
Thermal resistance, junction - ambient for SMD version	RthJA		35	75	°C/W	Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm² copper area for drain connection and cooling, vertical without air stream cooling	4
Soldering temperature, wavesoldering only allowed at leads	Tsold			260	°C	reflow MSL1	4
Drain-source breakdown voltage	V(BR)DSS	600			V	VGS=0V,ID=1mA	5
Gate threshold voltage	V(GS)th	3.5	4	4.5	V	VDS=VGS,ID=0.04mA	5
Zero gate voltage drain current	IDSS			1	µA	VDS=600V,VGS=0V,Tj=25°C	5
Zero gate voltage drain current	IDSS			37	µA	VDS=600V,VGS=0V,Tj=125°C	5
Gate-source leakage current	IGSS			1000	nA	VGS=20V,VDS=0V	5
Drain-source on-state resistance	RDS(on)		1.23	1.5	Ω	VGS=10V,ID=0.7A,Tj=25°C	5
Drain-source on-state resistance	RDS(on)		2.893		Ω	VGS=10V,ID=0.7A,Tj=150°C	5
Reverse recovery time	trr		40	59	ns	VR=400V,IF=0.7A,diF/dt=100A/µs; see table 8	6
Reverse recovery charge	Qrr		0.06	0.12	µC	VR=400V,IF=0.7A,diF/dt=100A/µs; see table 8	6

CAD (KiCad official)

Symbol: IPN60R1K5PFD7SATMA1
Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
3D model: SOT-223 (KiCad packages3D, STEP)
3D model files: ipn60r1k5pfd7satma1-etched.step / ipn60r1k5pfd7satma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipn60r1k5pfd7satma1.step / ipn60r1k5pfd7satma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Infineon Technologies datasheet (14 pp, sha256 429333c8a769ba97, retrieved 2026-10-30, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

IPN60R1K5PFD7SATMA1

Verified IPN60R1K5PFD7SATMA1

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3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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