component
DMN4026SSD-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDMN4026SSD-HXY
HXY MOSFET · MOSFETs · SOP-8
DMN4026SSD-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel), with drain-source voltage rated 40 V. |
| 2 | G1 | input | Gate of MOSFET 1, with gate-source voltage rated ±20 V and threshold of 1 V to 2.0 V at 250 µA. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel), with drain-source voltage rated 40 V. |
| 4 | G2 | input | Gate of MOSFET 2, with gate-source voltage rated ±20 V and threshold of 1 V to 2.0 V at 250 µA. |
| 5 | D2 | passive | Drain of MOSFET 2, tied to pin 6, with 40 V VDS and 12 A continuous drain current rating. |
| 6 | D2 | passive | Drain of MOSFET 2, tied to pin 5, with 40 V VDS and 12 A continuous drain current rating. |
| 7 | D1 | passive | Drain of MOSFET 1, tied to pin 8, with 40 V VDS and 12 A continuous drain current rating. |
| 8 | D1 | passive | Drain of MOSFET 1, tied to pin 7, with 40 V VDS and 12 A continuous drain current rating. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | Tj=25°C | 1 | ||
| Gate-Source Voltage | VGS | 20 | V | Tj=25°C, printed +20 | 1 | ||
| Drain Current | ID | 12 | A | TA=25℃, VGS @ 4.5V | 1 | ||
| Drain Current | ID | 7 | A | TA=70℃, VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Total Power Dissipation | PD | 2.9 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 65 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 12 | 16 | mΩ | VGS=10V, ID=8A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 18.9 | 24 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Forward Transconductance | gFS | 33 | S | VDS=5V,ID=8A | 2 | ||
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS=0V,IS=9A | 2 | |
| Input Capacitance | Clss | 964 | PF | VDS=20V,VGS=0V,F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 109 | PF | VDS=20V,VGS=0V,F=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 96 | PF | VDS=20V,VGS=0V,F=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 5.5 | nS | VDD=20V, RL=2.5Ω, VGS=10V, RGEN=3Ω | 2 | ||
| Turn-on Rise Time | tr | 14 | nS | VDD=20V, RL=2.5Ω, VGS=10V, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 24 | nS | VDD=20V, RL=2.5Ω, VGS=10V, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 12 | nS | VDD=20V, RL=2.5Ω, VGS=10V, RGEN=3Ω | 2 | ||
| Total Gate Charge | Qg | 22.9 | nC | VDS=20V,ID=8A,VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 3.5 | nC | VDS=20V,ID=8A,VGS=10V | 2 | ||
| Gate-Drain Charge | Qgd | 5.3 | nC | VDS=20V,ID=8A,VGS=10V | 2 |
CAD (KiCad official)
- Symbol:
DMN4026SSD-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
dmn4026ssd-hxy-etched.step/dmn4026ssd-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn4026ssd-hxy.step/dmn4026ssd-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
2361346db1fedc44, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).