SI1926DL-T1-BE3 from Vishay Intertech, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S1	passive	Source of N-channel MOSFET 1; drain-source voltage rated 60 V.
2	G1	input	Gate of N-channel MOSFET 1; gate-source voltage limit is ±20 V and the device is ESD protected to 1800 V.
3	D2	passive	Drain of N-channel MOSFET 2; drain-source voltage rated 60 V with continuous drain current of 0.37 A at TC = 25 °C.
4	S2	passive	Source of N-channel MOSFET 2; drain-source voltage rated 60 V.
5	G2	input	Gate of N-channel MOSFET 2; gate-source voltage limit is ±20 V and the device is ESD protected to 1800 V.
6	D1	passive	Drain of N-channel MOSFET 1; drain-source voltage rated 60 V with continuous drain current of 0.37 A at TC = 25 °C.

Key specifications

Parameter	Value
Manufacturer	Vishay Intertech
Package	SC-70-6
Category	Triode/MOS Tube/Transistor
Pins	6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Breakdown Voltage	VDS	60			V	VGS = 0 V, ID = 250 μA	2
Gate-Source Threshold Voltage	VGS(th)	1		2.5	V	VDS = VGS, ID = 250 μA	2
Gate-Source Leakage	IGSS	-150		150	nA	VDS = 0 V, VGS = ± 10 V	2
Zero Gate Voltage Drain Current	IDSS			1	μA	VDS = 60 V, VGS = 0 V	2
Zero Gate Voltage Drain Current (85 °C)	IDSS			10	μA	VDS = 60 V, VGS = 0 V, TJ = 85 °C	2
On-State Drain Current	ID(on)	0.5			A	VDS ≥ 10 V, VGS = 4.5 V	2
On-State Drain Current	ID(on)	0.65			A	VDS ≥ 7.5 V, VGS = 10 V	2
Drain-Source On-State Resistance	RDS(on)			1.4	Ω	VGS = 10 V, ID = 0.34 A	2
Drain-Source On-State Resistance	RDS(on)			3	Ω	VGS = 4.5 V, ID = 0.23 A	2
Total Gate Charge	Qg		0.9	1.4	nC	VDS = 30 V, VGS = 10 V, ID = 0.34 A	2
Total Gate Charge	Qg		0.5	0.75	nC	VDS = 30 V, VGS = 4.5 V, ID = 0.34 A	2
Gate Resistance	Rg		160	240	Ω	f = 1 MHz	2
Turn-On Delay Time	td(on)		6.5	10	ns	VDD = 30 V, RL = 100 Ω, ID ≅ 0.3 A, VGEN = 10 V, Rg = 1 Ω	2
Rise Time	tr		12	18	ns	VDD = 30 V, RL = 100 Ω, ID ≅ 0.3 A, VGEN = 10 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		13	22	ns	VDD = 30 V, RL = 100 Ω, ID ≅ 0.3 A, VGEN = 10 V, Rg = 1 Ω	2
Fall Time	tf		14	21	ns	VDD = 30 V, RL = 100 Ω, ID ≅ 0.3 A, VGEN = 10 V, Rg = 1 Ω	2
Continuous Source-Drain Diode Current	IS			0.43	A	TC = 25 °C	2
Pulse Diode Forward Current	ISM			0.65	A		2
Body Diode Voltage	VSD		0.8	1.2	V	IS = 0.3 A	2
Body Diode Reverse Recovery Time	trr		16.5	25	ns	IF = 0.6 A, dI/dt = 100 A/μs	2
Body Diode Reverse Recovery Charge	Qrr		13	20	nC	IF = 0.6 A, dI/dt = 100 A/μs	2
Drain-Source Voltage	VDS			60	V	TA = 25 °C	1
Gate-Source Voltage	VGS	-20		20	V	TA = 25 °C	1
Continuous Drain Current	ID			0.37	A	TJ = 150 °C, TC = 25 °C	1
Continuous Drain Current	ID			0.3	A	TJ = 150 °C, TC = 70 °C	1
Continuous Drain Current	ID			0.34	A	TJ = 150 °C, TA = 25 °C, b, c	1
Continuous Drain Current	ID			0.27	A	TJ = 150 °C, TA = 70 °C, b, c	1
Pulsed Drain Current	IDM			0.65	A		1
Continuous Source-Drain Diode Current	IS			0.43	A	TC = 25 °C	1
Continuous Source-Drain Diode Current	IS			0.25	A	TA = 25 °C, b, c	1
Maximum Power Dissipation	PD			0.51	W	TC = 25 °C	1
Maximum Power Dissipation	PD			0.33	W	TC = 70 °C	1
Maximum Power Dissipation	PD			0.3	W	TA = 25 °C, b, c	1
Maximum Power Dissipation	PD			0.2	W	TA = 70 °C, b, c	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Maximum Junction-to-Ambient	RthJA		360	415	°C/W	t ≤ 5 s, surface mounted on 1" x 1" FR4 board	1
Maximum Junction-to-Foot (Drain)	RthJF		300	350	°C/W	Steady State	1
VDS Temperature Coefficient	ΔVDS/TJ		56.7		mV/°C	ID = 250 μA	2
VGS(th) Temperature Coefficient	ΔVGS(th)/TJ		-3		mV/°C	ID = 250 μA	2
Forward Transconductance	gfs		159		ms	VDS = 30 V, ID = 0.2 A	2
Input Capacitance	Ciss		18.5		pF	VDS = 30 V, VGS = 0 V, f = 1 MHz	2
Output Capacitance	Coss		7.5		pF	VDS = 30 V, VGS = 0 V, f = 1 MHz	2
Reverse Transfer Capacitance	Crss		4.2		pF	VDS = 30 V, VGS = 0 V, f = 1 MHz	2
Gate-Source Charge	Qgs		0.2		nC	VDS = 30 V, VGS = 4.5 V, ID = 0.34 A	2
Gate-Drain Charge	Qgd		0.15		nC	VDS = 30 V, VGS = 4.5 V, ID = 0.34 A	2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part	Material	Colour / plating	Datasheet says	Page
contacts	copper		The 6-pin SC-70 evaluation board (EVB) measures 0.6 inches by 0.5 inches. The copper pad traces are the same as	8

CAD (KiCad official)

Symbol: SI1926DL-T1-BE3
Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
3D model: SC-70-6 (KiCad packages3D, STEP)
3D model files: si1926dl-t1-be3-etched.step / si1926dl-t1-be3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si1926dl-t1-be3.step / si1926dl-t1-be3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Vishay Intertech datasheet (11 pp, sha256 3d2016a576464687, retrieved 2026-11-02, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

SI1926DL-T1-BE3

Verified SI1926DL-T1-BE3

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3D Model

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Schematic Symbol

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