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README

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HAONS32304

HXY MOSFET · MOSFETs · DFN-8(5x6)

HAONS32304 from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source pin, marked as Pin 1 on the package drawing; the source is the MOSFET's low-side terminal (VDS max 30V).
2 S passive Source pin, tied to the same source terminal as the other S pins (continuous current 150A at TC=25℃, package limitation 85A).
3 S passive Source pin, tied to the same source terminal as the other S pins.
4 G input Gate pin, with a gate-source voltage limit of ±20V and a threshold VGS(th) of 1.2V min to 2.5V max at 250uA.
5 D passive Drain pin, tied to the same drain terminal as the other D pins (VDS max 30V, RDS(ON) below 2.4mΩ at VGS=10V).
6 D passive Drain pin, tied to the same drain terminal as the other D pins.
7 D passive Drain pin, tied to the same drain terminal as the other D pins.
8 D passive Drain pin, tied to the same drain terminal as the other D pins (pulsed drain current IDM 160A).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 2.4 mΩ VGS=10V, ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 3.2 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Continuous Source Current IS 150 A VG=VD=0V, Force Current 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 150 A VGS @ 10V, TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 80 A VGS @ 10V, TC=100℃ 1
Pulsed Drain Current IDM 160 A 1
Single Pulse Avalanche Energy EAS 180 mJ Note 3: VDD=25V, VGS=10V, L=0.1mH, IAS=60A 1
Avalanche Current IAS 60 A 1
Total Power Dissipation PD@TC=25℃ 187 W TC=25℃, note 4 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) 1
Thermal Resistance Junction-Case RθJC 1.1 ℃/W Note 1 1

CAD (KiCad official)

  • Symbol: HAONS32304
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: haons32304-etched.step / haons32304-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); haons32304.step / haons32304.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 79cd01d80422efcd, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF