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TSM60N06CPROG-VB

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by Ray

VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorstsm60n06cprog-vb
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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

markdown

TSM60N06CPROG-VB

VBsemi Elec · MOSFETs · TO-252

TSM60N06CPROG-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate control input. VGS(th) typ 2.0-4.0 V; absolute max VGS = ±20 V. Drive to ≥10 V (or ≥4.5 V for logic-level operation) to fully enhance the channel.
2 D passive Drain. N-channel MOSFET drain terminal, electrically common with the exposed tab. VDS max 60 V; continuous ID = 97 A at TC = 25 °C (56 A at 125 °C); pulsed IDM = 290 A.
3 S passive Source. N-channel MOSFET source terminal. Continuous IS (body-diode conduction) = 100 A; body-diode VSD typ 0.9 V (max 1.5 V) at IF = 50 A.
4 D (TAB) passive Exposed thermal tab, internally connected to the Drain. Provides the primary heat-sinking path (RthJC = 1.1 °C/W). Solder to a copper pad tied to the drain net.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • TSM60N06CPROG-VB

CAD (KiCad official)

  • Symbol: TSM60N06CPROG-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 6407ae00e5c07442, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF