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Contents

README

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FQP50N06

JSMSEMI · MOSFETs · TO-220

FQP50N06 from JSMSEMI, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate (G) input Gate terminal of the 60V N-channel MOSFET; the datasheet gives a gate-source voltage rating of ±25 V (VGSS) and a threshold voltage VGS(th) of 2 V min to 4 V max at ID=250µA.
2 Drain (D) passive Drain terminal of the MOSFET, rated for a drain-source voltage VDSS of 60 V and a drain current ID of 50 A at TC=25℃.
3 Source (S) passive Source terminal of the MOSFET; the body diode is rated for a maximum continuous forward current IS of 50 A and a pulsed current ISM of 200 A.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 1
Drain Current ID 50 A TC=25℃ 1
Drain Current ID 35.4 A TC=100℃ 1
Gate Threshold Voltage VGSS -25 25 V 1
Single Pulse Avalanche Energy (note1) EAS 490 mJ 1
Avalanche Current (note2) IAR 50 A 1
Power Dissipation PD 120 W Tc=25℃ 1
Junction Temperature(MAX) Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering purpose, 1/8 inch from case for 5 seconds TL 300 ℃ 1/8 inch from case, 5 seconds 1
Thermal Resistance, Junction to Case RθJC 1.24 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1
Thermal Resistance, Case to Sink RθCS 0.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V ID=250μA, VGS=0 2
Zero Gate Voltage Drain Current IDSS 1 μA Vds=60V, Vgs=0V 2
Zero Gate Voltage Drain Current IDSS 10 μA Vds=48V, Tc=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA Vgs=+25V, Vds=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA Vgs=-25V, Vds=0V 2
Gate Threshold Voltage VGS(th) 2 4 V Id=250uA, Vds=Vgs 2
Static Drain-Source On-Resistance RDS(on) 0.022 Ω Id=25A, Vgs=10V 2
Input Capacitance Ciss 1180 1540 pF VDS=25V, VGS=0, f=1.0MHz 2
Output Capacitance Coss 440 580 pF VDS=25V, VGS=0, f=1.0MHz 2
Reverse Transfer Capacitance Crss 65 90 pF VDS=25V, VGS=0, f=1.0MHz 2
Turn-On Delay Time Td(on) 15 40 nS VDD=250V, ID=25A, RG=25Ω (Note 3,4) 2
Turn-On Rise Time Tr 105 220 nS VDD=250V, ID=25A, RG=25Ω (Note 3,4) 2
Turn-Off Delay Time Td(off) 60 130 nS VDD=250V, ID=25A, RG=25Ω (Note 3,4) 2
Turn-Off Fall Time Tf 65 140 nS VDD=250V, ID=25A, RG=25Ω (Note 3,4) 2
Total Gate Charge Qg 31 41 nC VDS=400, VGS=10V, ID=25A (Note 3,4) 2
Maximum Continuous Drain-Source Diode Forward Current IS 50 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 200 A 2
Drain-Source Diode Forward Voltage VSD 1.5 V Id=25A 2

CAD (KiCad official)

  • Symbol: FQP50N06
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: fqp50n06-etched.step / fqp50n06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fqp50n06.step / fqp50n06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (7 pp, sha256 38a7902729ed8399, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF