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MEM2310M3G

Public Made by Adom

by adom

MICRONE MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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MEM2310M3G

MICRONE · MOSFETs · SOT-23-3L

MEM2310M3G from MICRONE, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±12 V, with threshold VGS(th) of 0.7 V min, 0.88 V typ and 1.4 V max at ID=250uA.
2 S passive Source; maximum body-diode continuous current is 2.5 A and the drain-source breakdown voltage is 30 V min.
3 D passive Drain; drain-source voltage rated 30 V, continuous drain current 5.8 A at TA=25℃ and pulsed drain current 30 A.

Key specifications

Parameter Value
Manufacturer MICRONE
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 1
Gate-Source Voltage VGSS -12 12 V 1
Drain Current ID 5.8 A TA=25℃ 1
Drain Current ID 4.9 A TA=70℃ 1
Pulsed Drain Current IDM 30 A 1
Total Power Dissipation Pd 1.4 W TA=25℃ 1
Total Power Dissipation Pd 1 W TA=70℃ 1
Operating Junction Temperature Tj 150 ℃ 1
Storage Temperature Range Tstg -65 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 65 90 ℃/W t≤10s 2
Thermal Resistance, Junction-to-Ambient Steady-State RθJA 85 125 ℃/W Steady-State 2
Thermal Resistance, Junction-to-Lead Steady-State RθJL 43 60 ℃/W Steady-State 2
Drain-Source Breakdown Voltage V(BR)DSS 30 35 V VGS=0V, ID=250uA 2
Gate Threshold Voltage VGS(th) 0.7 0.88 1.4 V VDS= VGS, ID=250uA 2
Gate-Body Leakage IGSS 0.5 100 nA VDS=0V，VGS=12V 2
Gate-Body Leakage IGSS -0.2 -100 nA VDS=0V，VGS=-12V 2
Zero Gate Voltage Drain Current IDSS 1000 nA VDS=24V VGS=0V 2
Static Drain-Source On-Resistance RDS(ON) 25 30 mΩ VGS=10V, ID=5.8A 2
Static Drain-Source On-Resistance RDS(ON) 28 33 mΩ VGS=4.5V, ID=5A 2
Static Drain-Source On-Resistance RDS(ON) 37 50 mΩ VGS=2.5V, ID=4A 2
Forward Transconductance gFS 10 15 S VDS = 5 V, ID = 5A 2
Maximum Body-Diode Continuous Current Is 2.5 A 2
Source-drain (diode forward) voltage VSD 0.72 1 V VGS=0V,IS=1A 2
Input Capacitance Ciss 823 1030 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Gate resistance Rg 1.2 3.6 Ω VGS=0V, VDS=0V, f=1MHz 2
Turn-On Delay Time td(on) 7 14 ns VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω 2
Rise Time tr 15 30 ns VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω 2
Turn-Off Delay Time td(off) 38 76 ns VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω 2
Fall-Time tf 3 6 ns VDD = 15 V, RL = 2.7Ω, VGEN = 10V, Rg = 3 Ω 2
Total Gate Charge Qg 11 14.3 nc VDS = 15 V, VGS = 4.5 V, ID = 5.8A 2
Gate-Source Charge Qgs 1.6 2.08 nc VDS = 15 V, VGS = 4.5 V, ID = 5.8A 2
Gate-Drain Charge Qgd 2.8 3.64 nc VDS = 15 V, VGS = 4.5 V, ID = 5.8A 2
Output Capacitance Coss 99 pF 2
Reverse Transfer Capacitance Crss 77 pF 2

CAD (KiCad official)

  • Symbol: MEM2310M3G
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: mem2310m3g-etched.step / mem2310m3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mem2310m3g.step / mem2310m3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MICRONE datasheet (7 pp, sha256 4eac3e8efb4f985f, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF