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MS8205A

Public Made by Adom

by adom

MSKSEMI MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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PCB Footprint

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Datasheet

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Contents

README

markdown

MS8205A

MSKSEMI · MOSFETs · TSSOP-8

MS8205A from MSKSEMI, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D1 passive Drain of MOSFET 1 (N-channel, VDS max 20 V, ID 6 A continuous).
2 S1 passive Source of MOSFET 1.
3 S1 passive Source of MOSFET 1, internally the same node as pin 2.
4 G1 input Gate of MOSFET 1 (VGS max ±12 V, threshold 0.5 to 1.2 V).
5 G2 input Gate of MOSFET 2 (VGS max ±12 V, threshold 0.5 to 1.2 V).
6 S2 passive Source of MOSFET 2.
7 S2 passive Source of MOSFET 2, internally the same node as pin 6.
8 D2 passive Drain of MOSFET 2 (N-channel, VDS max 20 V, ID 6 A continuous).

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package TSSOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V TA=25℃ unless otherwise noted 2
Gate-Source Voltage VGS -12 12 V TA=25℃ unless otherwise noted; printed as ±12 V 2
Drain Current-Continuous ID 6 A TA=25℃ unless otherwise noted 2
Drain Current-Pulsed IDM 25 A Note 1 2
Maximum Power Dissipation PD 1.5 W TA=25℃ unless otherwise noted 2
Operating Junction and Storage Temperature Range TJ ,TSTG -55 150 ℃ TA=25℃ unless otherwise noted 2
Thermal Resistance, Junction-to-Ambient RθJA 83 ℃/W Note 2 (surface mounted on FR4 board, t ≤ 10 sec) 2
Drain-Source Breakdown Voltage BVDSS 20 21 V VGS=0V ID=250μA 3
Zero Gate Voltage Drain Current IDSS 1 μA VDS=19.5V,VGS=0V 3
Gate-Body Leakage Current IGSS -100 100 nA VGS=±10V,VDS=0V 3
Gate Threshold Voltage VGS(th) 0.5 0.7 1.2 V VDS=VGS ,ID=250μA 3
Drain-Source On-State Resistance RDS(ON) 21 27 mΩ VGS=4.5V, ID=4.5A 3
Drain-Source On-State Resistance RDS(ON) 27 37 mΩ VGS=2.5V, ID=3.5A 3
Turn-on Delay Time td(on) 10 20 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 3
Turn-on Rise Time tr 11 25 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 3
Turn-Off Delay Time td(off) 35 70 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 3
Turn-Off Fall Time tf 30 60 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 3
Total Gate Charge Qg 10 15 nC VDS=10V,ID=6A, VGS=4.5V 3
Diode Forward Voltage VSD 0.75 1.2 V VGS=0V,IS=1.7A (Note 3) 3
Diode Forward Current IS 1.7 A Note 2 3

CAD (KiCad official)

  • Symbol: MS8205A
  • Footprint: Package_SO:TSSOP-8_3x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: ms8205a-etched.step / ms8205a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ms8205a.step / ms8205a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (8 pp, sha256 7ab8b33b9f421506, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF