component
JY6310X
Public Made by Adomby adom
Shenzhen JingYang MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownJY6310X
Shenzhen JingYang · MOSFETs · SOT-23
JY6310X from Shenzhen JingYang, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage max ±20 V, threshold VGS(th) 1.0 to 2.5 V at VDS=VGS, ID=250μA. |
| 2 | S | passive | Source; continuous drain current 3 A at TC=25℃ (2 A at TC=100℃), body diode continuous forward current IS 3 A. |
| 3 | D | passive | Drain; drain-source voltage max 60 V, pulsed drain current 10 A, RDS(on) below 100 mΩ at VGS=10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 3 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | 2 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 10 | A | note1 | 1 | ||
| Power Dissipation | PD | 0.35 | W | TA = 25℃ | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 357 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS =60V, VGS = 0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS =0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS= VGS, ID= 250μA | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 100 | mΩ | VGS =10V, ID =2A | 2 | ||
| Static Drain-Source on-Resistance | RDS(on) | 115 | mΩ | VGS =4.5V, ID =1A | 2 | ||
| Maximum Continuous Drain to Source Diode Forward Current | IS | 3 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 10 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS =1A | 2 |
CAD (KiCad official)
- Symbol:
JY6310X - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
jy6310x-etched.step/jy6310x-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jy6310x.step/jy6310x.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen JingYang datasheet (9 pp, sha256
f8bd8a1469372886, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).