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KSI2301CDS-T1-GE3
Public Made by Adomby adom
KUU MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKSI2301CDS-T1-GE3
KUU · MOSFETs · SOT-23
KSI2301CDS-T1-GE3 from KUU, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate of the P-channel MOSFET; gate-source voltage limited to ±12 V, threshold -0.4 to -1 V at ID=-250 uA. |
| 2 | SOURCE | passive | Source of the P-channel MOSFET; body diode forward current up to -1.3 A and drain-source voltage rating of -20 V. |
| 3 | DRAIN | passive | Drain of the P-channel MOSFET; continuous drain current -3 A, drain-source voltage -20 V, power dissipation 1 W. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KUU |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ | 1 | |
| Drain Current | ID | -3 | A | TA=25℃ | 1 | ||
| Power Dissipation | PD | 1 | W | TA=25℃ | 1 | ||
| Junction Temperature | Tj | 150 | ℃ | TA=25℃ | 1 | ||
| Storage Temperature | Tstg | -55 | 150 | ℃ | TA=25℃ | 1 | |
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS=0V,ID=-250uA | 1 | ||
| Gate-Threshold Voltage | Vth(GS) | -0.4 | -0.7 | -1 | V | VDS= VGS, ID=-250 uA | 1 |
| Gate-body Leakage | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 1 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS=-20V, VGS=0V | 1 | ||
| Drain-Source On-Resistance (VGS=-4.5V) | rDS(ON) | 64 | 110 | mΩ | VGS=-4.5V, ID=-3A | 1 | |
| Drain-Source On-Resistance (VGS=-2.5V) | rDS(ON) | 89 | 140 | mΩ | VGS=-2.5V, ID=-2A | 1 | |
| Total Gate Charge | Qg | 3.3 | 12 | nC | VDS=-10V, ID=-3A, VGS=-2.5V | 1 | |
| Forward Transconductance | gfs | 9.5 | s | VDS=-5V, ID=-2.8A | 1 | ||
| Input Capacitance | Ciss | 405 | pF | VDS=-10V, VGS=0V, f=1MHz | 1 | ||
| Output Capacitance | Coss | 75 | pF | VDS=-10V, VGS=0V, f=1MHz | 1 | ||
| Reverse Transfer Capacitance | Crss | 55 | pF | VDS=-10V, VGS=0V, f=1MHz | 1 | ||
| Turn-on Delay Time | td(on) | 11 | nS | VDD=-10V, ID=-1A, VGS=-4.5V, RGEN=10Ω | 1 | ||
| Turn-on Rise Time | tr | 35 | nS | VDD=-10V, ID=-1A, VGS=-4.5V, RGEN=10Ω | 1 | ||
| Turn-off Delay Time | td(off) | 30 | nS | VDD=-10V, ID=-1A, VGS=-4.5V, RGEN=10Ω | 1 | ||
| Turn-off Fall Time | tf | 10 | nS | VDD=-10V, ID=-1A, VGS=-4.5V, RGEN=10Ω | 1 | ||
| Gate-Source Charge | Qgs | 0.7 | nC | VDS=-10V, ID=-3A, VGS=-2.5V | 1 | ||
| Gate-Drain Charge | Qgd | 1.3 | nC | VDS=-10V, ID=-3A, VGS=-2.5V | 1 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, ID=-1.3A | 1 | ||
| Diode Forward Current | Is | -1.3 | A | 1 |
CAD (KiCad official)
- Symbol:
KSI2301CDS-T1-GE3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ksi2301cds-t1-ge3-etched.step/ksi2301cds-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ksi2301cds-t1-ge3.step/ksi2301cds-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KUU datasheet (2 pp, sha256
5da0a9fd6c1ec72b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).