component
VBE1606
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownVBE1606
VBsemi Elec · MOSFETs · TO-252
VBE1606 from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated at ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; rated for 60 V drain-source voltage and 97 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source terminal; rated for 100 A continuous source (diode conduction) current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 97 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 56 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 100 | A | 1 | |||
| Pulsed Drain Current | IDM | 290 | A | 1 | |||
| Single Pulse Avalanche Current | IAS | 45 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 101 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 136 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 45 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient (PCB Mount) | RthJA | 50 | °C/W | PCB mount, 1 in square PCB (FR-4 material) | 1 | ||
| Junction-to-Case (Drain) | RthJC | 1.1 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | VDS = VGS, ID = 250 μA | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | VGS = 0 V VDS = 60 V | 2 | |||
| Zero Gate Voltage Drain Current | IDSS | 50 | μA | VGS = 0 V VDS = 60 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 150 | VGS = 0 V VDS = 60 V, TJ = 175 °C | 2 | |||
| On-State Drain Current | ID(on) | 50 | A | VGS = 10 V VDS5 V | 2 | ||
| Total Gate Charge | Qg | 82 | 125 | nC | VGS = 10 V VDS = 30 V, ID = 50 A | 2 | |
| Input Capacitance | Ciss | 4844 | 6060 | pF | VGS = 0 V VDS = 25 V, f = 1 MHz | 2 | |
| Output Capacitance | Coss | 441 | 555 | pF | 2 | ||
| Reverse Transfer Capacitance | Crss | 200 | 250 | pF | 2 | ||
| Gate Resistance | Rg | 1 | 2 | 3 | f = 1 MHz | 2 | |
| Turn-On Delay Time | td(on) | 14 | 21 | ns | VDD = 30 V, RL = 0.6 Ω, ID 50 A, VGEN = 10 V, Rg = 1 | 2 | |
| Turn-Off Delay Time | td(off) | 41 | 62 | ns | 2 | ||
| Fall Time | tf | 7 | 11 | ns | 2 | ||
| Pulsed Current | ISM | 290 | A | 2 | |||
| Forward Voltage | VSD | 0.9 | 1.5 | V | IF = 50 A, VGS = 0 V | 2 | |
| Drain-Source On-State Resistance (TJ = 25 °C, 10 V) | RDS(on) | 0.005 | Ω | VGS = 10 V ID = 25 A | 2 | ||
| Drain-Source On-State Resistance (TJ = 125 °C, 10 V) | RDS(on) | 0.0117 | Ω | VGS = 10 V ID = 25 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance (TJ = 175 °C, 10 V) | RDS(on) | 0.0149 | Ω | VGS = 10 V ID = 25 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance (4.5 V) | RDS(on) | 0.012 | Ω | VGS = 4.5 V ID = 20 A | 2 | ||
| Turn-Rise Time | tr | 58 | ns | 2 |
CAD (KiCad official)
- Symbol:
VBE1606 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
vbe1606-etched.step/vbe1606-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vbe1606.step/vbe1606.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
aab19b34575f244a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).