component
YJL2102W
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownYJL2102W
Yangzhou Yangjie Elec Tech · MOSFETs · SOT-323
YJL2102W from Yangzhou Yangjie Elec Tech, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±10 V, with threshold VGS(th) 0.55 V min, 0.78 V typ, 1.1 V max at VDS=VGS, ID=250 µA. |
| 2 | S | passive | Source; body-diode continuous current IS is 3.0 A max and drain current ID is 3.0 A at TA=25℃. |
| 3 | D | passive | Drain; drain-source voltage is 20 V max, drain current 3.0 A continuous and 14 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | 20 | V | 1 | |||
| Gate-source Voltage | VGS | -10 | 10 | V | 1 | ||
| Drain Current, steady state | ID | 3 | A | TA=25℃ @ Steady State | 1 | ||
| Drain Current, steady state | ID | 2.4 | A | TA=70℃ @ Steady State | 1 | ||
| Pulsed Drain Current | IDM | 14 | A | 1 | |||
| Total Power Dissipation | PD | 0.25 | W | TA=25℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient, steady state | RθJA | 500 | ℃/W | @ Steady State | 1 | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS= 0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±10V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.55 | 0.78 | 1.1 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 57 | 70 | mΩ | VGS= 4.5V, ID=2.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 72 | 98 | mΩ | VGS= 2.5V, ID=2.0A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS=2.5A, VGS=0V | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 3 | A | 2 |
CAD (KiCad official)
- Symbol:
YJL2102W - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
yjl2102w-etched.step/yjl2102w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjl2102w.step/yjl2102w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256
5a0c01d11ff793b6, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).