component
DMN2058UW-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Contents
README
markdownDMN2058UW-13
Diodes Incorporated · MOSFETs · SOT-323
DMN2058UW-13 from Diodes Incorporated, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±12V maximum with a threshold of 0.4V to 1.2V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the body diode conducts continuous forward current up to 1.0A from source to drain. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 20V with continuous drain current of 3.5A at TA = +25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±12V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 0.4 | 1.2 | V | VDS = VGS, ID = 250µA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 31.5 | 42 | mΩ | VGS = 10V, ID = 3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 32 | 45 | mΩ | VGS = 4.5V, ID = 2A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 40.5 | 60 | mΩ | VGS = 2.5V, ID = 2A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 48 | 91 | mΩ | VGS = 1.8V, ID = 1A | 2 | |
| Diode Forward Voltage | VSD | 0.78 | 1.2 | V | VGS = 0V, IS = 1A | 2 | |
| Drain-Source Voltage | VDSS | 20 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -12 | 12 | V | TA = +25°C | 2 | |
| Continuous Drain Current | ID | 3.5 | A | VGS = 10V, Steady State, TA = +25°C, Note 6 | 2 | ||
| Continuous Drain Current | ID | 3 | A | VGS = 10V, Steady State, TA = +70°C, Note 6 | 2 | ||
| Maximum Continuous Body Diode Forward Current | IS | 1 | A | Note 6 | 2 | ||
| Pulsed Drain Current | IDM | 20 | A | 10µs Pulse, Duty Cycle = 1%, Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Total Power Dissipation | PD | 0.5 | mW | Note 5, minimum recommended pad layout | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 259 | °C/W | Steady State, Note 5 | 2 | ||
| Total Power Dissipation | PD | 0.7 | mW | Note 6, 1" x 1" FR-4 PCB 2oz Cu | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 175 | °C/W | Steady State, Note 6 | 2 | ||
| Input Capacitance | Ciss | 281 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 50 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 39 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 | ||
| Gate Resistance | Rg | 3.1 | Ω | f = 1.0MHz, VGS = 0V, VDS = 0V | 2 | ||
| Total Gate Charge (VGS = 4.5V) | Qg | 3.6 | nC | VDS = 10V, ID = 6.0A | 2 | ||
| Total Gate Charge (VGS = 10V) | Qg | 7.7 | nC | VDS = 10V, ID = 6.0A | 2 | ||
| Gate-Source Charge | Qgs | 0.5 | nC | VDS = 10V, ID = 6.0A | 2 | ||
| Gate-Drain Charge | Qgd | 0.9 | nC | VDS = 10V, ID = 6.0A | 2 | ||
| Turn-On Delay Time | tD(ON) | 2 | ns | VGS = 4.5V, VDD = 10V, Rg = 6Ω, ID = 6.0A | 2 | ||
| Turn-On Rise Time | tR | 4.9 | ns | VGS = 4.5V, VDD = 10V, Rg = 6Ω, ID = 6.0A | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 9.9 | ns | VGS = 4.5V, VDD = 10V, Rg = 6Ω, ID = 6.0A | 2 | ||
| Turn-Off Fall Time | tF | 3.3 | ns | VGS = 4.5V, VDD = 10V, Rg = 6Ω, ID = 6.0A | 2 | ||
| Body Diode Reverse Recovery Time | tRR | 5.4 | ns | IF = 6.0A, di/dt = 100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | QRR | 0.7 | nC | IF = 6.0A, di/dt = 100A/μs | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
DMN2058UW-13 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
dmn2058uw-13-etched.step/dmn2058uw-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn2058uw-13.step/dmn2058uw-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
432db5928b24ca19, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).