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AON6298
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAON6298
Alpha & Omega Semicon · MOSFETs · DFN-8(5x6)
AON6298 from Alpha & Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the MOSFET; pin 1 is marked with a dot on the package. |
| 2 | S | passive | Source terminal of the MOSFET, connected to the other source pins. |
| 3 | S | passive | Source terminal of the MOSFET, connected to the other source pins. |
| 4 | G | input | Gate terminal; the datasheet gives a gate-source voltage limit of ±20V. |
| 5 | D | passive | Drain terminal; drain-source voltage is rated to 100V. |
| 6 | D | passive | Drain terminal; drain-source voltage is rated to 100V. |
| 7 | D | passive | Drain terminal; drain-source voltage is rated to 100V. |
| 8 | D | passive | Drain terminal; drain-source voltage is rated to 100V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=100V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS=100V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.4 | 2.85 | 3.4 | V | VDS=VGS, ID=250µA | 2 |
| On state drain current | ID(ON) | 95 | A | VGS=10V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 13.7 | 16.5 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 25.7 | 31 | mΩ | VGS=10V, ID=20A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 16.6 | 21 | mΩ | VGS=6V, ID=20A | 2 | |
| Diode Forward Voltage | VSD | 0.73 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 46 | A | 2 | |||
| Gate resistance | Rg | 0.6 | 1.25 | 1.9 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Forward Transconductance | gFS | 43 | S | VDS=5V, ID=20A | 2 | ||
| Input Capacitance | Ciss | 1307 | pF | VGS=0V, VDS=50V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 127 | pF | VGS=0V, VDS=50V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 8 | pF | VGS=0V, VDS=50V, f=1MHz | 2 | ||
| Total Gate Charge | Qg(10V) | 16 | 23 | nC | VGS=10V, VDS=50V, ID=20A | 2 | |
| Gate Source Charge | Qgs | 5 | nC | VGS=10V, VDS=50V, ID=20A | 2 | ||
| Gate Drain Charge | Qgd | 3 | nC | VGS=10V, VDS=50V, ID=20A | 2 | ||
| Turn-On Delay Time | tD(on) | 7.5 | ns | VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 2.5 | ns | VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 16.5 | ns | VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 3 | ns | VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 30 | ns | IF=20A, dI/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 132 | nC | IF=20A, dI/dt=500A/µs | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25°C | 1 | |
| Continuous Drain Current | ID | 46 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 30 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 95 | A | 1 | |||
| Continuous Drain Current | IDSM | 11 | A | TA=25°C | 1 | ||
| Continuous Drain Current | IDSM | 11.5 | A | TA=70°C | 1 | ||
| Avalanche Current | IAS | 14.5 | A | 1 | |||
| Avalanche energy | EAS | 15 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 78 | W | TC=25°C | 1 | ||
| Power Dissipation | PD | 31 | W | TC=100°C | 1 | ||
| Power Dissipation | PDSM | 4.7 | W | TA=25°C | 1 | ||
| Power Dissipation | PDSM | 7.4 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 14 | 17 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient | RθJA | 40 | 55 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Case | RθJC | 1.25 | 1.6 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AON6298 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
aon6298-etched.step/aon6298-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aon6298.step/aon6298.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (6 pp, sha256
584a33945c25572b, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).