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SDH8595AE
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Hangzhou Silan Microelectronics AC-DC Controllers And Regulators, DIP-8-300mil. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSDH8595AE
Hangzhou Silan Microelectronics · AC-DC Controllers And Regulators · DIP-8-300mil
SDH8595AE from Hangzhou Silan Microelectronics, in a DIP-8-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VCC | power_in | Supply pin: the IC starts when VCC rises to 18V (VST 16.5-19.5V), enters undervoltage lockout at 8.5V (VSP 7.5-9.5V), and VCC overvoltage protection acts at 28V (25.5-29.5V), with absolute maximum VCC of -0.3 to 29.5V. |
| 2 | NC | unconnected | Floating (no-connect) pin, listed as 悬空端 in the datasheet, so it is left unconnected. |
| 3 | FB | input | Feedback voltage input for constant-voltage control with a 3V threshold (VCV 2.90-3.10V), FB overvoltage protection at 3.6V (3.4-3.8V), FB undervoltage protection at 1.9V, and an input voltage range of -1 to 6V. |
| 4 | ISEN | input | Peak current sense input for the primary-side sense resistor, with a maximum current detection threshold of 580mV and a minimum of 160mV, and an input voltage range of -0.3 to 6V. |
| 5 | Drain | output | High-voltage MOSFET drain connection for the internal 650V power switch, with BVDSS of 650V and RDS(ON) listed as 3.7 in the datasheet's electrical table. |
| 6 | Drain | output | High-voltage MOSFET drain connection for the internal 650V power switch (pins 5 and 6 are both drain), with BVDSS of 650V and RDS(ON) listed as 3.7 in the datasheet's electrical table. |
| 7 | GND | power_in | Ground reference pin for the controller. |
| 8 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | DIP-8-300mil |
| Category | Power Management (PMIC) |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VCC supply voltage | VCC | -0.3 | 29.5 | V | 3 | ||
| Input pin voltage (pin 4, ISEN) | VI | -0.3 | 6 | V | 3 | ||
| Input pin voltage (pin 3, FB) | VI | -1 | 6 | V | 3 | ||
| Input current | IIN | -10 | 10 | mA | 3 | ||
| Operating junction temperature | TJ | 150 | C | 3 | |||
| Operating ambient temperature range | Tamb | -20 | 85 | C | 3 | ||
| ESD (human body model) | ESD | 2500 | V | Human body model | 3 | ||
| Start-up current | IST | 1 | 3 | µA | VCC=14V | 3 | |
| Start-up voltage | VST | 16.5 | 18 | 19.5 | V | 3 | |
| Shutdown voltage | VSP | 7.5 | 8.5 | 9.5 | V | 3 | |
| VCC overvoltage protection voltage | Vccovp | 25.5 | 28 | 29.5 | V | 3 | |
| Constant voltage threshold | VCV | 2.9 | 3 | 3.1 | V | 3 | |
| FB overvoltage protection voltage | VFBOVP | 3.4 | 3.6 | 3.8 | V | 3 | |
| Cable compensation current | ICOMP_CABLE | 39 | 43 | 47 | µA | 3 | |
| Leading edge blanking time | TLEB | 0.4 | 0.5 | 0.6 | µs | 3 | |
| MOSFET source-drain breakdown voltage | BVDSS | 650 | V | 3 | |||
| Charging current (high-voltage start-up) | IHVC | 1000 | µA | VCC=0V, VDrain=100V | 3 | ||
| Off-state leakage current (high-voltage start-up) | IHVS | 3 | µA | VCC=18V, VDrain=650V | 3 | ||
| Static operating current | IDD | 600 | µA | ISEN=0, FB=0 | 3 | ||
| VCC clamp voltage | VVCC_CLP | 30 | V | IVCC=10mA | 3 | ||
| FB undervoltage protection voltage | VFBUVP | 1.9 | V | 3 | |||
| Maximum current sense threshold | VISEN_MAX | 580 | mV | 3 | |||
| Minimum current sense threshold | VISEN_MIN | 160 | mV | 3 | |||
| Maximum on-time | TON_MAX | 20 | µs | 3 | |||
| Over-temperature protection threshold | TOTP | 150 | C | 3 | |||
| Over-temperature protection hysteresis | TOTP_hys | 30 | C | 3 | |||
| On-resistance | RDS(ON) | 3.7 | 3 |
CAD (KiCad official)
- Symbol:
SDH8595AE - Footprint:
Package_DIP:DIP-8_W7.62mm - 3D model: DIP-8-300mil (KiCad packages3D, STEP)
- 3D model files:
sdh8595ae-etched.step/sdh8595ae-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sdh8595ae.step/sdh8595ae.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Hangzhou Silan Microelectronics datasheet (10 pp, sha256
b992907cf45b5268, retrieved 2026-10-18, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).