component
SP4227TQ
Public Made by Adomby adom
Siliup MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSP4227TQ
Siliup · MOSFETs · TO-220-3L
SP4227TQ from Siliup, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet rates VGS at ±20 V maximum, with gate threshold VGS(th) of 3 V min, 4 V typ, 5 V max at VDS=VGS and ID=250μA. |
| 2 | D | passive | Drain terminal of the 200 V N-channel MOSFET, rated for 70 A continuous drain current at Tc=25℃ and 280 A pulsed drain current. |
| 3 | S | passive | Source terminal, the reference for VGS and for the body diode, with diode forward voltage VSD of 1.2 V max at VGS=0V and IS=1A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-220-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Drain Current-Continuous | ID | 70 | A | Tc=25℃ | 2 | ||
| Pulsed Drain Current | IDM | 280 | A | 2 | |||
| Maximum Power Dissipation | PD | 330 | W | Tc=25℃ | 2 | ||
| Single pulse avalanche energy | EAS | 126 | mJ | Note 1: Tj=25℃,VDD=50V,VG=10V,L=0.3mH,Rg=25Ω | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.38 | ℃/W | Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec | 2 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=160V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 3 | 4 | 5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 19 | 24 | mΩ | VGS=10V, ID=40A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=1A | 2 |
CAD (KiCad official)
- Symbol:
SP4227TQ - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files:
sp4227tq-etched.step/sp4227tq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp4227tq.step/sp4227tq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (6 pp, sha256
89591051c6086ce9, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).