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NCE40H12K
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE40H12K
Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L
NCE40H12K from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±20V maximum and a gate threshold of 1.2V to 2.5V at ID=250μA. |
| 2 | D | passive | Drain, also connected to the exposed tab; VDS is rated 40V maximum with continuous ID of 120A at TC=25℃. |
| 3 | S | passive | Source; carries up to 120A continuous current (body diode IS 120A max). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 120 | A | 1 | |||
| Drain Current-Continuous (TC=100℃) | ID (100℃) | 85 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 330 | A | 1 | |||
| Maximum Power Dissipation | PD | 120 | W | 1 | |||
| Single pulse avalanche energy (Note 5) | EAS | 1080 | mJ | Note 5: Tj=25℃,VDD=20V,VG=10V,L=1mH,Rg=25Ω, IAS=46.5A | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 40 | 45 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 3.6 | 4 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 5.8 | 7 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Forward Transconductance | gFS | 26 | S | VDS=10V,ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=40A | 2 | ||
| Diode Forward Current | IS | 120 | A | 2 | |||
| Thermal Resistance, Junction-to-Case | RθJC | 1.25 | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec (Note 2) | 2 |
CAD (KiCad official)
- Symbol:
NCE40H12K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
nce40h12k-etched.step/nce40h12k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce40h12k.step/nce40h12k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
03832a9d6ad7db7a, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).