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HSW2004

Public Made by Adom

by adom

HUASHUO MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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HSW2004

HUASHUO · MOSFETs · SOT-23-6

HSW2004 from HUASHUO, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of MOSFET 1 (N-channel, VDS 20 V), gate-source voltage limited to ±12 V.
2 S2 passive Source of MOSFET 2 (P-channel, VDS -20 V).
3 G2 input Gate of MOSFET 2 (P-channel), gate-source voltage limited to ±12 V.
4 D2 passive Drain of MOSFET 2 (P-channel), continuous drain current -4 A at TA=25℃ and pulsed -12 A.
5 S1 passive Source of MOSFET 1 (N-channel, VDS 20 V).
6 D1 passive Drain of MOSFET 1 (N-channel), continuous drain current 4 A at TA=25℃ and pulsed 12 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-ch Drain-Source Voltage VDS 20 V 1
P-ch Drain-Source Voltage VDS -20 V 1
N-ch Gate-Source Voltage VGS -12 12 V 1
P-ch Gate-Source Voltage VGS -12 12 V 1
N-ch Continuous Drain Current at TA=25℃ ID@TA=25℃ 4 A VGS @ -4.5V 1
P-ch Continuous Drain Current at TA=25℃ ID@TA=25℃ -4 A VGS @ -4.5V 1
N-ch Continuous Drain Current at TA=70℃ ID@TA=70℃ 2.4 A VGS @ -4.5V 1
P-ch Continuous Drain Current at TA=70℃ ID@TA=70℃ -2.4 A VGS @ -4.5V 1
N-ch Pulsed Drain Current IDM 12 A 1
P-ch Pulsed Drain Current IDM -12 A 1
N-ch Total Power Dissipation at TA=25℃ PD@TA=25℃ 1.4 W 1
P-ch Total Power Dissipation at TA=25℃ PD@TA=25℃ 1.4 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 125 ℃/W 1
N-ch Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V , ID=250uA 2
N-ch Static Drain-Source On-Resistance RDS(ON) 19 24 mΩ VGS=4.5V , ID=4A 2
N-ch Static Drain-Source On-Resistance RDS(ON) 26 34 mΩ VGS=2.5V , ID=3A 2
N-ch Gate Threshold Voltage VGS(th) 0.5 0.8 1.2 V VGS=VDS , ID =250uA 2
N-ch Drain-Source Leakage Current at TJ=25℃ IDSS 1 uA VDS=16V , VGS=0V , TJ=25℃ 2
N-ch Drain-Source Leakage Current at TJ=55℃ IDSS 5 uA VDS=16V , VGS=0V , TJ=55℃ 2
N-ch Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V , VDS=0V 2
N-ch Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
P-ch Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V , ID=-250uA 5
P-ch Static Drain-Source On-Resistance RDS(ON) 35 45 mΩ VGS=-4.5V , ID=-4A 5
P-ch Static Drain-Source On-Resistance RDS(ON) 50 65 mΩ VGS=-2.5V , ID=-3A 5
P-ch Gate Threshold Voltage VGS(th) -0.4 -0.7 -1 V VGS=VDS , ID =-250uA 5
P-ch Drain-Source Leakage Current at TJ=25℃ IDSS -1 uA VDS=-16V , VGS=0V , TJ=25℃ 5
P-ch Drain-Source Leakage Current at TJ=55℃ IDSS -5 uA VDS=-16V , VGS=0V , TJ=55℃ 5
P-ch Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V , VDS=0V 5
P-ch Diode Forward Voltage VSD -0.81 -1.2 V VGS=0V , IS=-1A , TJ=25℃ 5

CAD (KiCad official)

  • Symbol: HSW2004
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: hsw2004-etched.step / hsw2004-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsw2004.step / hsw2004.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (8 pp, sha256 f7cc5bd09f484ebd, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF