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Contents

README

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HE3342EAP8

HEERMICR · Battery Management · ESOP-8

HE3342EAP8 from HEERMICR, in a ESOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground terminal of the charger, which must be connected to the system ground and the exposed pad.
2 VCC power_in Input supply pin, operating at 4.5 V to 6.5 V; when VCC is less than 30 mV above BAT the device enters low-power shutdown with BAT pin current below 2 µA.
3 CHRG output Open-drain charge status output that is pulled low by an internal switch while charging and is high-impedance otherwise, with a low-level output of 0.35 V to 0.5 V at 5 mA.
4 STDBY output Open-drain charge-complete output that is pulled low when charging is finished and is high-impedance otherwise, with a low-level output of 0.35 V to 0.5 V at 5 mA.
5 TEMP input Battery NTC input where charging pauses if the voltage is below 45% or above 80% of VCC, tying it to VCC disables temperature sensing, and tying it to GND puts the device in standby with charging terminated.
6 BAT power_out Battery positive connection that delivers the charge current and limits the battery to 4.2 V or 4.35 V, with leakage below 2 µA when disabled or in sleep mode.
7 SEN input Charge-current setting pin where the charge current is Ibat = 0.1/Rs, with 100 mV across the sense resistor in constant-current mode.
8 SW power_out Switching output connected to the external inductor, which forms the battery charge-current path, with an absolute maximum rating of -0.3 V to 7.0 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HEERMICR
Package ESOP-8
Category Power Management (PMIC)
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VIN input voltage VIN -0.3 6.5 V 3
VBAT terminal voltage VBAT -0.3 7 V 3
CHRG, STDBY terminal voltage -0.3 8 V 3
SW, SEN, TEMP terminal voltage -0.3 7 V 3
Maximum operating junction temperature 145 °C 3
Operating temperature range -40 85 °C 3
Storage temperature range Tstg -65 125 °C 3
Package thermal resistance, junction to ambient θJA 60 °C/W 3
Lead soldering temperature -260 260 °C Soldering, 10 sec 3
ESD machine model -200 200 V Machine mode 3
ESD human body model -2000 2000 V Human body mode 3
Input supply voltage VCC 4.5 5 6.5 V 4
Input supply current, charge mode ICC 250 500 uA 充电模式 4
Input supply current, standby (charge terminated) ICC 220 280 uA 待机模式(充电终止) 4
Input supply current, shutdown ICC 190 280 uA VCC < VBAT, or VCC < VUVLO 4
Float (output) voltage, HE3342EA VFLOAT 4.16 4.2 4.25 V 0°C≤TA≤85°C(HE3342EA) 4
BAT constant charge current IBAT 900 1000 1100 mA 恒流模式,RS =0.1Ω 4
BAT constant charge current IBAT 1800 2000 2200 mA 恒流模式,RS =0.05Ω 4
BAT standby current IBAT 0 -2 -5 uA 待机模式,VBAT =4.20V 4
BAT shutdown current IBAT 1 2 uA 停机模式 4
Trickle charge current ITRIKL 150 200 250 mA VBAT<VTRIKL, RS =0.05Ω 4
Trickle charge threshold voltage VTRIKL 2.8 2.9 3 V VBAT上升 4
Trickle charge threshold hysteresis VTRHYS 70 100 130 mV VBAT下降 4
VCC undervoltage lockout threshold VUVLO 3.6 3.8 4 V VCC上升 4
VCC undervoltage lockout hysteresis VUVHYS 150 200 250 mV VCC下降 4
VCC-VBAT lockout voltage (rising) VASD 120 200 280 mV VCC上升 4
VCC-VBAT lockout voltage (falling) VASD 30 40 50 mV VCC下降 4
C/10 termination current threshold ITERM 100 mA RS =0.1Ω 4
C/10 termination current threshold ITERM 200 mA RS =0.05Ω 4
CHRG output low voltage VCHRG 0.35 0.5 V ICHRG=5mA 4
STDBY output low voltage VSTDBY 0.35 0.5 V ISTDBY=5mA 4
TEMP pin high-side trip voltage VTS-H 80 %VCC 4
TEMP pin low-side trip voltage VTS-L 45 %VCC 4
Recharge threshold voltage VRECHG 200 330 mV VFLOAT-VRECHG 4
Switching frequency fosc 1.5 MHz 4
P-MOSFET on-resistance RPFET 150 mΩ 4
N-MOSFET on-resistance RNFET 120 mΩ 4
Soft-start time tSS 20 us 4
Recharge delay time tRECHG 0.8 1.8 4 ms VBAT由高到低 4
Charge termination delay time tTERM 0.6 1.4 3 ms IBAT降至 ICHG/10 以下 4

CAD (KiCad official)

  • Symbol: HE3342EAP8
  • Footprint: Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm
  • 3D model: ESOP-8 (KiCad packages3D, STEP)
  • 3D model files: he3342eap8-etched.step / he3342eap8-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); he3342eap8.step / he3342eap8.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HEERMICR datasheet (10 pp, sha256 330bdc562199a265, retrieved 2026-10-18, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF