DMPH4015SSSQ-13 from Diodes Incorporated, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin	Name	Type	Function
1	S	passive	Source of the P-channel MOSFET, connected internally to the body diode anode; VDSS is -40V.
2	S	passive	Source of the P-channel MOSFET, tied in parallel with the other source pins to carry the continuous drain current of up to -11.4A.
3	S	passive	Source of the P-channel MOSFET, tied in parallel with the other source pins.
4	G	input	Gate of the P-channel MOSFET with a gate-source rating of ±25V and a threshold of -1.5V to -2.5V.
5	D	passive	Drain of the P-channel MOSFET, rated for -40V drain-source and pulsed drain current up to -85A.
6	D	passive	Drain of the P-channel MOSFET, tied in parallel with the other drain pins.
7	D	passive	Drain of the P-channel MOSFET, tied in parallel with the other drain pins.
8	D	passive	Drain of the P-channel MOSFET, tied in parallel with the other drain pins.

Key specifications

Parameter	Value
Manufacturer	Diodes Incorporated
Package	SOIC-8
Category	Transistors/Thyristors
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDSS			-40	V	TA = +25°C	2
Gate-Source Voltage	VGSS	-25		25	V	TA = +25°C	2
Continuous Drain Current	ID			-11.4	A	VGS = -10V, steady state, TA = +25°C	2
Continuous Drain Current	ID			-8.1	A	VGS = -10V, steady state, TA = +100°C	2
Pulsed Drain Current	IDM			-85	A	10μs Pulse, Duty Cycle = 1%	2
Maximum Body Diode Continuous Current	IS			-3	A	Note 7	2
Avalanche Current	IAS			-22	A	L = 1mH	2
Avalanche Energy	EAS			260	mJ	L = 1mH	2
Total Power Dissipation	PD			1.4	W	Note 6	2
Thermal Resistance, Junction to Ambient	RθJA			90	°C/W	Note 6	2
Total Power Dissipation	PD			1.8	W	Note 7	2
Thermal Resistance, Junction to Ambient	RθJA			70	°C/W	Note 7	2
Thermal Resistance, Junction to Case	RθJC			7	°C/W	Note 7	2
Operating and Storage Temperature Range	TJ, TSTG	-55		175	°C		2
Drain-Source Breakdown Voltage	BVDSS	-40			V	VGS = 0V, ID = -250μA	2
Zero Gate Voltage Drain Current	IDSS			-1	μA	VDS = -40V, VGS = 0V	2
Gate-Source Leakage	IGSS	-100		100	nA	VGS = ±25V, VDS = 0V	2
Gate Threshold Voltage	VGS(TH)	-1.5		-2.5	V	VDS = VGS, ID = -250μA	2
Static Drain-Source On-Resistance	RDS(ON)		9	11	mΩ	VGS = -10V, ID = -9.8A	2
Static Drain-Source On-Resistance	RDS(ON)		11	15	mΩ	VGS = -4.5V, ID = -9.8A	2
Diode Forward Voltage	VSD		-0.7	-1	V	VGS = 0V, IS = -1A	2
Forward Transfer Admittance	/Yfs/		26		S	VDS = -20V, ID = -9.8A	2
Input Capacitance	Ciss		4234		pF	VDS = -20V, VGS = 0V, f = 1MHz	2
Output Capacitance	Coss		1036		pF	VDS = -20V, VGS = 0V, f = 1MHz	2
Reverse Transfer Capacitance	Crss		526		pF	VDS = -20V, VGS = 0V, f = 1MHz	2
Gate Resistance	RG		7.8		Ω	VDS = 0V, VGS = 0V, f = 1MHz	2
Total Gate Charge (VGS = -4.5V)	Qg		42.7		nC	VDS = -20V, ID = -9.8A	2
Total Gate Charge (VGS = -10V)	Qg		91		nC	VDS = -20V, ID = -9.8A	2
Gate-Source Charge	Qgs		14.2		nC	VDS = -20V, ID = -9.8A	2
Gate-Drain Charge	Qgd		13.5		nC	VDS = -20V, ID = -9.8A	2
Turn-On Delay Time	tD(ON)		13.2		ns	VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A, RL = 20Ω	2
Turn-On Rise Time	tR		10		ns	VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A, RL = 20Ω	2
Turn-Off Delay Time	tD(OFF)		303		ns	VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A, RL = 20Ω	2
Turn-Off Fall Time	tF		138		ns	VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A, RL = 20Ω	2
Reverse Recovery Time	tRR		26		ns	IF = -9.8A, di/dt = -100A/μs	2
Reverse Recovery Charge	QRR		20		nC	IF = -9.8A, di/dt = -100A/μs	2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part	Material	Colour / plating	Datasheet says	Page
contacts	Copper	tin	x Terminal Connections: See Diagram x Terminals: Finish, Matte Tin Annealed over Copper Leadframe.	1

CAD (land: KiCad; 3D: generated from the datasheet)

Symbol: DMPH4015SSSQ-13
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SOIC-8, generated on the KiCad land (body 3.85 x 4.9 mm, terminals on the pads, 1.45 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
3D model files: dmph4015sssq-13-etched.step / dmph4015sssq-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmph4015sssq-13.step / dmph4015sssq-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Diodes Incorporated datasheet (7 pp, sha256 d21293f6e1fcc2cd, retrieved 2026-11-13, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF

DMPH4015SSSQ-13

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3D Model

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