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SI4800BDY-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4800BDY-T1-GE3
Vishay Intertech · MOSFETs · SO-8
SI4800BDY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, with continuous diode source current rated at 2.3 A. |
| 2 | S | passive | Source of the N-channel MOSFET, with continuous diode source current rated at 2.3 A. |
| 3 | S | passive | Source of the N-channel MOSFET, with continuous diode source current rated at 2.3 A. |
| 4 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±25 V. |
| 5 | D | passive | Drain of the N-channel MOSFET, with a maximum drain-source voltage of 30 V and 9 A continuous drain current at TA = 25 °C (10 s). |
| 6 | D | passive | Drain of the N-channel MOSFET, with a maximum drain-source voltage of 30 V and 9 A continuous drain current at TA = 25 °C (10 s). |
| 7 | D | passive | Drain of the N-channel MOSFET, with a maximum drain-source voltage of 30 V and 9 A continuous drain current at TA = 25 °C (10 s). |
| 8 | D | passive | Drain of the N-channel MOSFET, with a maximum drain-source voltage of 30 V and 9 A continuous drain current at TA = 25 °C (10 s). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SO-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.8 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 30 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.0155 | 0.0185 | Ω | VGS = 10 V, ID = 9 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.023 | 0.03 | Ω | VGS = 4.5 V, ID = 7 A | 2 | |
| Forward Transconductance | gfs | 16 | S | VDS = 15 V, ID = 9 A | 2 | ||
| Diode Forward Voltage | VSD | 0.75 | 1.2 | V | IS = 2.3 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 8.7 | 13 | nC | VDS = 15 V, VGS = 5.0 V, ID = 9 A | 2 | |
| Gate-Source Charge | Qgs | 1.5 | nC | VDS = 15 V, VGS = 5.0 V, ID = 9 A | 2 | ||
| Gate-Drain Charge | Qgd | 3.5 | nC | VDS = 15 V, VGS = 5.0 V, ID = 9 A | 2 | ||
| Gate Resistance | Rg | 0.5 | 1.4 | 2.2 | Ω | 2 | |
| Turn-On Delay Time | td(on) | 7 | 15 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Rise Time | tr | 12 | 20 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 32 | 50 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Fall Time | tf | 14 | 25 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Source-Drain Reverse Recovery Time | trr | 30 | 60 | ns | IF = 2.3 A, dI/dt = 100 A/µs | 2 | |
| Drain-Source Voltage | VDS | 30 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -25 | 25 | V | TA = 25 °C | 1 | |
| Continuous Drain Current, 10 s | ID | 9 | A | TJ = 150 °C, TA = 25 °C, t ≤ 10 s | 1 | ||
| Continuous Drain Current, Steady State | ID | 6.5 | A | TJ = 150 °C, TA = 25 °C | 1 | ||
| Continuous Drain Current, 10 s | ID | 7 | A | TJ = 150 °C, TA = 70 °C, t ≤ 10 s | 1 | ||
| Continuous Drain Current, Steady State | ID | 5 | A | TJ = 150 °C, TA = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 10 µs Pulse Width | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 2.3 | A | 1 | |||
| Avalanche Current | IAS | 15 | A | L = 0.1 mH | 1 | ||
| Single-Pulse Avalanche Energy | EAS | 11.25 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation, 10 s | PD | 2.5 | W | TA = 25 °C, t ≤ 10 s | 1 | ||
| Maximum Power Dissipation, Steady State | PD | 1.3 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation, 10 s | PD | 1.6 | W | TA = 70 °C, t ≤ 10 s | 1 | ||
| Maximum Power Dissipation, Steady State | PD | 0.8 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance, t ≤ 10 s | RthJA | 40 | 50 | °C/W | t ≤ 10 s, surface mounted on FR4 board | 1 | |
| Junction-to-Ambient Thermal Resistance, Steady State | RthJA | 70 | 95 | °C/W | Steady State, surface mounted on FR4 board | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 24 | 30 | °C/W | Steady State | 1 |
CAD (KiCad official)
- Symbol:
SI4800BDY-T1-GE3 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4800bdy-t1-ge3-etched.step/si4800bdy-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4800bdy-t1-ge3.step/si4800bdy-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (6 pp, sha256
d5f9e6a5ee69f743, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).