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IRL6372PBF-HXY
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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRL6372PBF-HXY
HXY MOSFET · MOSFETs · SOP-8
IRL6372PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of MOSFET 1 in the dual N-channel device, rated with the part's 30V drain-source voltage and ±20V gate-source voltage limits. |
| 2 | G1 | input | Gate terminal of MOSFET 1, rated for a gate-source voltage of ±20V and specified for RDS(ON) at VGS = 4.5V and 10V. |
| 3 | S2 | passive | Source terminal of MOSFET 2 in the dual N-channel device, rated with the part's 30V drain-source voltage and ±20V gate-source voltage limits. |
| 4 | G2 | input | Gate terminal of MOSFET 2, rated for a gate-source voltage of ±20V and specified for RDS(ON) at VGS = 4.5V and 10V. |
| 5 | D2 | passive | Drain terminal of MOSFET 2; the datasheet lists the pin as D2 in the package diagram and gives a 30V drain-source breakdown rating for the device. |
| 6 | D2 | passive | Drain terminal of MOSFET 2 (second drain pin, tied to pin 5); the datasheet gives a 30V drain-source breakdown rating for the device. |
| 7 | D1 | passive | Drain terminal of MOSFET 1; the datasheet lists the pin as D1 in the package diagram and gives a 30V drain-source breakdown rating for the device. |
| 8 | D1 | passive | Drain terminal of MOSFET 1 (second drain pin, tied to pin 7); the datasheet gives a 30V drain-source breakdown rating for the device. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | printed as +20 V | 1 | ||
| Drain Current | ID@TA=25℃ | 8.5 | A | TA=25℃, VGS @ 4.5V, note 3 | 1 | ||
| Drain Current | ID@TA=70℃ | 5.8 | A | TA=70℃, VGS @ 4.5V, note 3 | 1 | ||
| Pulsed Drain Current | IDM | 37 | A | note 1 | 1 | ||
| Total Power Dissipation | PD@TA=25℃ | 1.5 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 85 | ℃/W | junction-ambient, note 3 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 18 | mΩ | VGS=10V, ID=7A; column placement of the printed value is ambiguous (see review_required) | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 28 | mΩ | VGS=4.5V, ID=4A; column placement of the printed value is ambiguous (see review_required) | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.034 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -5.8 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 6 | S | VDS=5V, ID=7A | 2 | ||
| Gate Resistance | Rg | 2.5 | VDS=0V, VGS=0V, f=1MHz | 2 | |||
| Total Gate Charge (4.5V) | Qg | 6 | nC | VDS=15V, VGS=4.5V, ID=7A | 2 | ||
| Gate-Source Charge | Qgs | 2.5 | nC | VDS=15V, VGS=4.5V, ID=7A | 2 | ||
| Gate-Drain Charge | Qgd | 2.1 | nC | VDS=15V, VGS=4.5V, ID=7A | 2 | ||
| Turn-On Delay Time | Td(on) | 2.4 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 | ||
| Rise Time | Tr | 7.8 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 | ||
| Turn-Off Delay Time | Td(off) | 22 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 | ||
| Fall Time | Tf | 4 | ns | VDD=15V, VGS=10V, RG=3.3, ID=7A | 2 | ||
| Input Capacitance | Ciss | 572 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 80 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 65 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Continuous Source Current | IS | 7.3 | A | VG=VD=0V, Force Current, notes 1,5 | 2 | ||
| Pulsed Source Current | ISM | 37 | A | notes 2,5 | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Reverse Recovery Time | trr | 20 | nS | IF=7A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 1.1 | nC | IF=7A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
IRL6372PBF-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irl6372pbf-hxy-etched.step/irl6372pbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irl6372pbf-hxy.step/irl6372pbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
d4a68e75196a266a, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).