component
MMBTA55LT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBTA55LT1G
onsemi · Bipolar (BJT) · SOT-23
MMBTA55LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP driver transistor; the datasheet gives no separate base-current limit, so the absolute limits are the shared ratings of VEBO -4.0 Vdc and IC -500 mAdc. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; emitter-base breakdown is specified at VEBO -4.0 Vdc minimum magnitude and the maximum continuous collector current is -500 mAdc. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, rated for VCEO -60 Vdc (MMBTA55) and VCBO -60 Vdc, with continuous collector current limited to -500 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector−Emitter Voltage (MMBTA55) | VCEO | -60 | Vdc | 1 | |||
| Collector−Base Voltage (MMBTA55) | VCBO | -60 | Vdc | 1 | |||
| Emitter−Base Voltage | VEBO | -4 | Vdc | 1 | |||
| Collector Current − Continuous | IC | -500 | mAdc | 1 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Total Device Dissipation FR−5 Board | PD | 225 | mW | TA = 25°C (FR−5 board, Note 1) | 1 | ||
| Thermal Resistance, Junction−to−Ambient FR−5 Board | RJA | 556 | °C/W | 1 | |||
| Total Device Dissipation Alumina Substrate | PD | 300 | mW | TA = 25°C (alumina substrate, Note 2) | 1 | ||
| Thermal Resistance, Junction−to−Ambient Alumina Substrate | RJA | 417 | °C/W | 1 | |||
| Collector−Emitter Breakdown Voltage (MMBTA55) | V(BR)CEO | -60 | Vdc | IC = −1.0 mAdc, IB = 0 | 2 | ||
| Emitter−Base Breakdown Voltage | V(BR)EBO | -4 | Vdc | IE = −100 Adc, IC = 0 | 2 | ||
| Collector Cutoff Current (VCE) | ICES | -0.1 | Adc | VCE = −60 Vdc, IB = 0 | 2 | ||
| Collector Cutoff Current (MMBTA55) | ICBO | -0.1 | Adc | VCB = −60 Vdc, IE = 0 | 2 | ||
| DC Current Gain | hFE | 100 | IC = −10 mAdc, VCE = −1.0 Vdc | 2 | |||
| Collector−Emitter Saturation Voltage | VCE(sat) | -0.25 | Vdc | IC = −100 mAdc, IB = −10 mAdc | 2 | ||
| Base−Emitter On Voltage | VBE(on) | -1.2 | Vdc | IC = −100 mAdc, VCE = −1.0 Vdc | 2 | ||
| Current−Gain − Bandwidth Product | fT | 50 | MHz | IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz | 2 |
CAD (KiCad official)
- Symbol:
MMBTA55LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbta55lt1g-etched.step/mmbta55lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbta55lt1g.step/mmbta55lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
881203b18108eb32, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).