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STGW40M120DF3
Public Made by Adomby adom
STMicroelectronics IGBT Transistors / Modules, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTGW40M120DF3
STMicroelectronics · IGBT Transistors / Modules · TO-247
STGW40M120DF3 from STMicroelectronics, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-emitter voltage is limited to ±20 V (VGE). |
| 2 | C | passive | Collector terminal, also connected to the metal tab; the collector-emitter voltage VCES is rated at 1200 V with VGE = 0 V. |
| 3 | E | passive | Emitter terminal, the reference for VGE and VCE in the datasheet ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-247 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCES | 1200 | V | VGE = 0 V | 2 | ||
| Continuous collector current at TC = 25 °C | IC | 80 | A | TC = 25 °C | 2 | ||
| Continuous collector current at TC = 100 °C | IC | 40 | A | TC = 100 °C | 2 | ||
| Pulsed collector current | ICP | 160 | A | Pulse width limited by maximum junction temperature | 2 | ||
| Gate-emitter voltage | VGE | -20 | 20 | V | 2 | ||
| Continuous forward current at TC = 25 °C | IF | 80 | A | TC = 25 °C | 2 | ||
| Continuous forward current at TC = 100 °C | IF | 40 | A | TC = 100 °C | 2 | ||
| Pulsed forward current | IFP | 160 | A | Pulse width limited by maximum junction temperature | 2 | ||
| Total power dissipation | PTOT | 468 | W | TC = 25 °C | 2 | ||
| Storage temperature range | TSTG | -55 | 150 | °C | 2 | ||
| Operating junction temperature range | TJ | -55 | 175 | °C | 2 | ||
| Thermal resistance, junction-to-case IGBT | RthJC | 0.32 | °C/W | 2 | |||
| Thermal resistance, junction-to-case diode | RthJC | 0.74 | °C/W | 2 | |||
| Thermal resistance, junction-to-ambient | RthJA | 50 | °C/W | 2 | |||
| Collector-emitter breakdown voltage | V(BR)CES | 1200 | V | VGE = 0 V, IC = 2 mA | 3 | ||
| Collector-emitter saturation voltage | VCE(sat) | 1.85 | 2.3 | V | VGE = 15 V, IC = 40 A | 3 | |
| Collector-emitter saturation voltage at TJ = 125 °C | VCE(sat) | 2.2 | V | VGE = 15 V, IC = 40 A, TJ = 125 °C | 3 | ||
| Collector-emitter saturation voltage at TJ = 175 °C | VCE(sat) | 2.3 | V | VGE = 15 V, IC = 40 A, TJ = 175 °C | 3 | ||
| Forward on-voltage | VF | 2.85 | 3.95 | V | IF = 40 A | 3 | |
| Forward on-voltage at TJ = 125 °C | VF | 2.25 | V | IF = 40 A, TJ = 125 °C | 3 | ||
| Forward on-voltage at TJ = 175 °C | VF | 2.1 | V | IF = 40 A, TJ = 175 °C | 3 | ||
| Gate threshold voltage | VGE(th) | 5 | 6 | 7 | V | VCE = VGE, IC = 2 mA | 3 |
| Collector cut-off current | ICES | 25 | µA | VGE = 0 V, VCE = 1200 V | 3 | ||
| Gate-emitter leakage current | IGES | -250 | 250 | nA | VGE = ±20 V, VCE = 0 V | 3 | |
| Short-circuit withstand time | tsc | 10 | µs | VCC ≤ 600 V, VGE = 15 V, TJstart ≤ 150 °C | 4 | ||
| Turn-on delay time | td(on) | 35 | ns | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω | 4 | ||
| Current rise time | tr | 15 | ns | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω | 4 | ||
| Turn-on current slope | (di/dt)on | 2100 | A/µs | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω | 4 | ||
| Turn-off-delay time | td(off) | 140 | ns | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω | 4 | ||
| Current fall time | tf | 135 | ns | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω | 4 | ||
| Turn-on switching energy | Eon | 1.5 | mJ | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω | 4 | ||
| Turn-off switching energy | Eoff | 2.25 | mJ | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω | 4 | ||
| Total switching energy | Ets | 3.75 | mJ | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω | 4 | ||
| Turn-on delay time at TJ = 175 °C | td(on) | 35 | ns | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C | 4 | ||
| Current rise time at TJ = 175 °C | tr | 18 | ns | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C | 4 | ||
| Turn-on current slope at TJ = 175 °C | (di/dt)on | 1800 | A/µs | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C | 4 | ||
| Turn-off-delay time at TJ = 175 °C | td(off) | 150 | ns | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C | 4 | ||
| Current fall time at TJ = 175 °C | tf | 240 | ns | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C | 4 | ||
| Turn-on switching energy at TJ = 175 °C | Eon | 2.8 | mJ | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C | 4 | ||
| Turn-off switching energy at TJ = 175 °C | Eoff | 3.45 | mJ | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C | 4 | ||
| Total switching energy at TJ = 175 °C | Ets | 6.25 | mJ | VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C | 4 | ||
| Input capacitance | Cies | 2500 | pF | VCE = 25 V, f = 1 MHz, VGE = 0 V | 3 | ||
| Output capacitance | Coes | 275 | pF | VCE = 25 V, f = 1 MHz, VGE = 0 V | 3 | ||
| Reverse transfer capacitance | Cres | 95 | pF | VCE = 25 V, f = 1 MHz, VGE = 0 V | 3 | ||
| Total gate charge | Qg | 125 | nC | VCC = 960 V, IC = 40 A, VGE = 0 to 15 V | 3 | ||
| Gate-emitter charge | Qge | 15 | nC | VCC = 960 V, IC = 40 A, VGE = 0 to 15 V | 3 | ||
| Gate-collector charge | Qgc | 75 | nC | VCC = 960 V, IC = 40 A, VGE = 0 to 15 V | 3 | ||
| Reverse recovery time | trr | 355 | ns | IF = 40 A, VR = 600 V, VGE = 15 V, di/dt = 1000 A/µs | 4 | ||
| Reverse recovery charge | Qrr | 2575 | nC | IF = 40 A, VR = 600 V, VGE = 15 V, di/dt = 1000 A/µs | 4 | ||
| Reverse recovery current | Irrm | 25 | A | IF = 40 A, VR = 600 V, VGE = 15 V, di/dt = 1000 A/µs | 4 | ||
| Peak rate of fall of reverse recovery current during tb | dIrr/dt | 1110 | A/µs | IF = 40 A, VR = 600 V, VGE = 15 V, di/dt = 1000 A/µs | 4 | ||
| Reverse recovery energy | Err | 1.12 | mJ | IF = 40 A, VR = 600 V, VGE = 15 V, di/dt = 1000 A/µs | 4 | ||
| Reverse recovery time at TJ = 175 °C | trr | 667 | ns | IF = 40 A, VR = 600 V, VGE = 15 V, TJ = 175 °C | 4 | ||
| Reverse recovery charge at TJ = 175 °C | Qrr | 8500 | nC | IF = 40 A, VR = 600 V, VGE = 15 V, TJ = 175 °C | 4 | ||
| Reverse recovery current at TJ = 175 °C | Irrm | 37 | A | IF = 40 A, VR = 600 V, VGE = 15 V, TJ = 175 °C | 4 | ||
| Peak rate of fall of reverse recovery current during tb at TJ = 175 °C | dIrr/dt | 450 | A/µs | IF = 40 A, VR = 600 V, VGE = 15 V, TJ = 175 °C | 4 | ||
| Reverse recovery energy at TJ = 175 °C | Err | 3.9 | mJ | IF = 40 A, VR = 600 V, VGE = 15 V, TJ = 175 °C | 4 |
CAD (KiCad official)
- Symbol:
STGW40M120DF3 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
stgw40m120df3-etched.step/stgw40m120df3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stgw40m120df3.step/stgw40m120df3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (17 pp, sha256
ad7ed3554b6c6753, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).