component
WNM5002-3
Public Made by Adomby adom
WILLSEMI Will Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWNM5002-3
WILLSEMI Will Semicon · MOSFETs · SOT-23
WNM5002-3 from WILLSEMI Will Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated VGS = ±20 V (absolute maximum). |
| 2 | S | passive | Source of the N-channel MOSFET; reference terminal for VGS, with the drain-source rating VDS = 50 V. |
| 3 | D | passive | Drain of the N-channel MOSFET; rated VDS = 50 V and continuous drain current ID = 0.50 A at TA = 25°C (steady state, 1 in² pad). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 50 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (a,d) | ID | 0.5 | A | TA=25°C, t ≤ 10 s | 2 | ||
| Continuous Drain Current (a,d) | ID | 0.44 | A | TA=25°C, steady state | 2 | ||
| Continuous Drain Current (a,d) | ID | 0.4 | A | TA=70°C, t ≤ 10 s | 2 | ||
| Continuous Drain Current (a,d) | ID | 0.35 | A | TA=70°C, steady state | 2 | ||
| Maximum Power Dissipation (a,d) | PD | 0.69 | W | TA=25°C, t ≤ 10 s | 2 | ||
| Maximum Power Dissipation (a,d) | PD | 0.53 | W | TA=25°C, steady state | 2 | ||
| Maximum Power Dissipation (a,d) | PD | 0.44 | W | TA=70°C, t ≤ 10 s | 2 | ||
| Maximum Power Dissipation (a,d) | PD | 0.34 | W | TA=70°C, steady state | 2 | ||
| Continuous Drain Current (b,d) | ID | 0.47 | A | TA=25°C, t ≤ 10 s | 2 | ||
| Continuous Drain Current (b,d) | ID | 0.42 | A | TA=25°C, steady state | 2 | ||
| Continuous Drain Current (b,d) | ID | 0.38 | A | TA=70°C, t ≤ 10 s | 2 | ||
| Continuous Drain Current (b,d) | ID | 0.33 | A | TA=70°C, steady state | 2 | ||
| Maximum Power Dissipation (b,d) | PD | 0.6 | W | TA=25°C, t ≤ 10 s | 2 | ||
| Maximum Power Dissipation (b,d) | PD | 0.47 | W | TA=25°C, steady state | 2 | ||
| Maximum Power Dissipation (b,d) | PD | 0.39 | W | TA=70°C, t ≤ 10 s | 2 | ||
| Maximum Power Dissipation (b,d) | PD | 0.3 | W | TA=70°C, steady state | 2 | ||
| Pulsed Drain Current (c) | IDM | 1.2 | A | Pulse width < 380 µs, duty cycle < 2% | 2 | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 2 | ||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 50 | V | VGS = 0V, ID = 250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS = 50V, VGS = 0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -5 | 5 | uA | VDS = 0 V, VGS = ±20V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 0.8 | 1 | 1.5 | V | VGS = VDS, ID = 250uA | 3 |
| Drain-to-source On-resistance (b,c) | RDS(on) | 1.3 | 3 | Ω | VGS = 10V, ID = 0.45A | 3 | |
| Drain-to-source On-resistance (b,c) | RDS(on) | 1.4 | 4 | Ω | VGS = 4.5V, ID = 0.25A | 3 | |
| Drain-to-source On-resistance (b,c) | RDS(on) | 1.5 | 4 | Ω | VGS = 4.0V, ID = 0.25A | 3 | |
| Drain-to-source On-resistance (b,c) | RDS(on) | 2.1 | 6 | Ω | VGS = 2.5V, ID = 0.01A | 3 | |
| Forward Voltage | VSD | 0.8 | 1.5 | V | VGS = 0 V, IS = 0.25A | 3 | |
| Junction-to-Ambient Thermal Resistance (a), t ≤ 10 s | RθJA | 140 | 180 | °C/W | Surface mounted on FR-4, 1 in² pad, t ≤ 10 s | 2 | |
| Junction-to-Ambient Thermal Resistance (a), steady state | RθJA | 176 | 232 | °C/W | Surface mounted on FR-4, 1 in² pad, steady state | 2 | |
| Junction-to-Ambient Thermal Resistance (b), t ≤ 10 s | RθJA | 165 | 205 | °C/W | Surface mounted on FR-4, minimum pad, t ≤ 10 s | 2 | |
| Junction-to-Ambient Thermal Resistance (b), steady state | RθJA | 198 | 261 | °C/W | Surface mounted on FR-4, minimum pad, steady state | 2 | |
| Junction-to-Case Thermal Resistance | RθJC | 100 | 120 | °C/W | Steady state | 2 |
CAD (KiCad official)
- Symbol:
WNM5002-3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
wnm5002-3-etched.step/wnm5002-3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wnm5002-3.step/wnm5002-3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI Will Semicon datasheet (8 pp, sha256
1155c1033e93ff32, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).