component
PBSS5480XZ
Public Made by Adomby adom
Nexperia Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownPBSS5480XZ
Nexperia · Bipolar (BJT) · SOT-89
PBSS5480XZ from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter terminal of the PNP BISS transistor, with the emitter-base voltage limited to −5 V (VEBO). |
| 2 | C | passive | Collector terminal, which is also the collector pad for heat transfer; collector current is limited to −4 A DC (−10 A peak, tp ≤ 1 ms). |
| 3 | B | passive | Base terminal, with base current limited to −1 A DC (−2 A peak, tp ≤ 1 ms). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage (open emitter) | VCBO | -80 | V | open emitter | 4 | ||
| collector-emitter voltage (open base) | VCEO | -80 | V | open base | 4 | ||
| emitter-base voltage (open collector) | VEBO | -5 | V | open collector | 4 | ||
| collector current (DC) | IC | -4 | A | note 1 | 4 | ||
| peak collector current | ICM | -10 | A | tp ≤ 1 ms or limited by Tj(max) | 4 | ||
| repetitive peak collector current | ICRP | -6 | A | tp ≤ 10 ms; δ ≤ 0.1 | 4 | ||
| base current (DC) | IB | -1 | A | 4 | |||
| peak base current | IBM | -2 | A | tp ≤ 1 ms | 4 | ||
| total power dissipation | Ptot | 2.5 | W | Tamb ≤ 25 °C; notes 2 and 3 | 4 | ||
| total power dissipation | Ptot | 0.55 | W | Tamb ≤ 25 °C; note 3 | 4 | ||
| total power dissipation | Ptot | 1 | W | Tamb ≤ 25 °C; note 4 | 4 | ||
| total power dissipation | Ptot | 1.4 | W | Tamb ≤ 25 °C; note 1 | 4 | ||
| total power dissipation | Ptot | 1.6 | W | Tamb ≤ 25 °C; note 5 | 4 | ||
| storage temperature | Tstg | -65 | 150 | °C | 4 | ||
| junction temperature | Tj | 150 | °C | 4 | |||
| ambient temperature | Tamb | -65 | 150 | °C | 4 | ||
| collector-base cut-off current | ICBO | -100 | nA | VCB = −80 V; IE = 0 A | 8 | ||
| collector-base cut-off current | ICBO | -50 | μA | VCB = −80 V; IE = 0 A; Tj = 150 °C | 8 | ||
| collector-emitter cut-off current | ICES | -100 | nA | VCE = −60 V; VBE = 0 V | 8 | ||
| emitter-base cut-off current | IEBO | -100 | nA | VEB = −5 V; IC = 0 A | 8 | ||
| DC current gain | hFE | 200 | 300 | VCE = −2 V; IC = −0.5 A | 8 | ||
| DC current gain | hFE | 180 | 280 | VCE = −2 V; IC = −1 A; note 1 | 8 | ||
| DC current gain | hFE | 150 | 240 | VCE = −2 V; IC = −2 A; note 1 | 8 | ||
| DC current gain | hFE | 80 | 150 | VCE = −2 V; IC = −4 A; note 1 | 8 | ||
| collector-emitter saturation voltage | VCEsat | -35 | -55 | mV | IC = −0.5 A; IB = −50 mA | 8 | |
| collector-emitter saturation voltage | VCEsat | -70 | -105 | mV | IC = −1 A; IB = −50 mA | 8 | |
| collector-emitter saturation voltage | VCEsat | -170 | -250 | mV | IC = −2 A; IB = −40 mA | 8 | |
| collector-emitter saturation voltage | VCEsat | -220 | -340 | mV | IC = −4 A; IB = −200 mA; note 1 | 8 | |
| collector-emitter saturation voltage | VCEsat | -250 | -380 | mV | IC = −5 A; IB = −500 mA; note 1 | 8 | |
| equivalent on-resistance | RCEsat | 50 | 75 | mΩ | IC = −5 A; IB = −500 mA; note 1 | 8 | |
| base-emitter saturation voltage | VBEsat | -770 | -850 | mV | IC = −0.5 A; IB = −50 mA | 8 | |
| base-emitter saturation voltage | VBEsat | -810 | -900 | mV | IC = −1 A; IB = −50 mA | 8 | |
| base-emitter saturation voltage | VBEsat | -930 | -1000 | mV | IC = −4 A; IB = −400 mA; note 1 | 8 | |
| base-emitter turn-on voltage | VBEon | -760 | -850 | mV | VCE = −2 V; IC = −2 A | 8 | |
| transition frequency | fT | 100 | 125 | MHz | IC = −0.1 A; VCE = −10 V; f = 100 MHz | 8 | |
| collector capacitance | Cc | 60 | 90 | pF | VCB = −10 V; IE = ie = 0 A; f = 1 MHz | 8 | |
| thermal resistance from junction to ambient in free air | Rth(j-a) | 50 | K/W | notes 1 and 2 | 6 | ||
| thermal resistance from junction to ambient in free air | Rth(j-a) | 225 | K/W | note 2 | 6 | ||
| thermal resistance from junction to ambient in free air | Rth(j-a) | 125 | K/W | note 3 | 6 | ||
| thermal resistance from junction to ambient in free air | Rth(j-a) | 90 | K/W | note 4 | 6 | ||
| thermal resistance from junction to ambient in free air | Rth(j-a) | 80 | K/W | note 5 | 6 | ||
| thermal resistance from junction to soldering point | Rth(j-s) | 16 | K/W | 6 |
CAD (KiCad official)
- Symbol:
PBSS5480XZ - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
pbss5480xz-etched.step/pbss5480xz-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pbss5480xz.step/pbss5480xz.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (14 pp, sha256
641e653005163aa6, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).