component
STF15N80K5
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STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTF15N80K5
STMicroelectronics · MOSFETs · TO-220FP
STF15N80K5 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is limited to ±30 V (absolute maximum, Table 1). |
| 2 | D | passive | Drain terminal, also connected to the tab; continuous drain current is 14 A at TC = 25 °C and VDS is rated 800 V (Table 1 and page 1). |
| 3 | S | passive | Source terminal; source-drain diode current is rated 14 A continuous and 56 A pulsed (Table 7). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -30 | 30 | V | 2 | ||
| Drain current (continuous) at TC = 25 °C | ID | 14 | A | TC = 25 °C | 2 | ||
| Drain current (continuous) at TC = 100 °C | ID | 8.8 | A | TC = 100 °C | 2 | ||
| Drain current (pulsed) | IDM | 56 | A | 2 | |||
| Total power dissipation (TO-220FP column) | PTOT | 35 | W | TC = 25 °C | 2 | ||
| Peak diode recovery voltage slope | dv/dt | 4.5 | V/ns | ISD ≤ 14 A, di/dt ≤ 100 A/µs, VDS (peak) < V(BR)DSS | 2 | ||
| Insulation withstand voltage (RMS) from all three leads to external heat sink | VISO | 2.5 | kV | t = 1 s; TC = 25 °C | 2 | ||
| Operating junction temperature range | TJ | -55 | 150 | °C | 2 | ||
| Thermal resistance, junction-to-case (TO-220FP column) | RthJC | 3.6 | °C/W | 2 | |||
| Thermal resistance, junction-to-ambient (TO-220FP column) | RthJA | 62.5 | °C/W | 2 | |||
| Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max.) | IAR | 4 | A | 2 | |||
| Single pulse avalanche energy | EAS | 150 | mJ | starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 | ||
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 100 µA | 3 |
| Static drain-source on-resistance | RDS(on) | 300 | 375 | mΩ | VGS = 10 V, ID = 7 A | 3 | |
| Gate body leakage current | IGSS | -10 | 10 | μA | VGS = ±20 V, VDS= 0 V | 3 | |
| Input capacitance | Ciss | 1100 | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 3 | ||
| Output capacitance | Coss | 85 | pF | 3 | |||
| Reverse transfer capacitance | Crss | 1.5 | pF | 3 | |||
| Equivalent capacitance time related | Co(tr) | 113 | pF | VDS = 0 to 640 V, VGS = 0 V | 3 | ||
| Equivalent capacitance energy related | Co(er) | 49 | pF | 3 | |||
| Gate input resistance | Rg | 4.5 | Ω | f = 1 MHz, ID = 0 A | 3 | ||
| Total gate charge | Qg | 32 | nC | VDD = 640 V, ID = 14 A, VGS = 0 to 10 V | 3 | ||
| Gate-source charge | Qgs | 6 | nC | 3 | |||
| Gate-drain charge | Qgd | 22 | nC | 3 | |||
| Turn-on delay time | td(on) | 19 | ns | VDD = 400 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V | 3 | ||
| Rise time | tr | 17.6 | ns | 3 | |||
| Turn-off delay time | td(off) | 44 | ns | 3 | |||
| Fall time | tf | 10 | ns | 3 |
CAD (KiCad official)
- Symbol:
STF15N80K5 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220FP (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (22 pp, sha256
21163c0da96dc474, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).