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AOD409
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOD409
Alpha Omega Semicon · MOSFETs · TO-252-2(DPAK)
AOD409 from Alpha Omega Semicon, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20 V, with threshold VGS(th) of -1.2 V min to -2.4 V max at ID=-250 µA. |
| 2 | D | passive | Drain, connected to the exposed tab (center lead position); drain-source voltage rating is -60 V and continuous current is -26 A at TC=25°C. |
| 3 | S | passive | Source; maximum body-diode continuous current is -30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | TO-252-2(DPAK) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | TA=25°C unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25°C unless otherwise noted | 1 | |
| Continuous Drain Current | ID | -26 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | -18 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | -60 | A | 1 | |||
| Avalanche Current | IAR | -26 | A | 1 | |||
| Repetitive avalanche energy | EAR | 30 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 60 | W | TC=25°C | 1 | ||
| Power Dissipation | PD | 33.8 | W | TC=100°C | 1 | ||
| Power Dissipation | PDSM | 2.5 | W | TA=25°C | 1 | ||
| Power Dissipation | PDSM | 1.6 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | ID=-250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -0.003 | -1 | µA | VDS=-48V, VGS=0V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS=-48V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.9 | -2.4 | V | VDS=VGS, ID=-250µA | 2 |
| On state drain current | ID(ON) | -60 | A | VGS=-10V, VDS=-5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 32 | 40 | mΩ | VGS=-10V, ID=-20A | 2 | |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) | 53 | mΩ | VGS=-10V, ID=-20A, TJ=125°C | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 43 | 55 | mΩ | VGS=-4.5V, ID=-20A | 2 | |
| Diode Forward Voltage | VSD | -0.73 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -30 | A | 2 | |||
| Input Capacitance | Ciss | 2977 | 3600 | pF | VGS=0V, VDS=-30V, f=1MHz | 2 | |
| Gate resistance | Rg | 2 | 2.4 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | |
| Total Gate Charge | Qg(10V) | 44 | 54 | nC | VGS=-10V, VDS=-30V, ID=-20A | 2 | |
| Total Gate Charge | Qg(4.5V) | 22.2 | 28 | nC | 2 | ||
| Body Diode Reverse Recovery Time | trr | 40 | 50 | ns | IF=-20A, dI/dt=100A/µs | 2 | |
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | 16.7 | 25 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | 40 | 50 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Case | RθJC | 1.9 | 2.5 | °C/W | Steady-State | 1 | |
| Forward Transconductance | gFS | 32 | S | VDS=-5V, ID=-20A | 2 | ||
| Output Capacitance | Coss | 241 | pF | VGS=0V, VDS=-30V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 153 | pF | VGS=0V, VDS=-30V, f=1MHz | 2 | ||
| Gate Source Charge | Qgs | 9 | nC | VGS=-10V, VDS=-30V, ID=-20A | 2 | ||
| Gate Drain Charge | Qgd | 10 | nC | VGS=-10V, VDS=-30V, ID=-20A | 2 | ||
| Turn-On Delay Time | tD(on) | 12 | ns | VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 14.5 | ns | VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 38 | ns | VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 15 | ns | VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 59 | nC | IF=-20A, dI/dt=100A/µs | 2 |
CAD (KiCad official)
- Symbol:
AOD409 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files:
aod409-etched.step/aod409-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod409.step/aod409.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256
356a21bf75cd5b69, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).