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Contents

README

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HXY2102EI

HXY MOSFET · MOSFETs · SOT-323

HXY2102EI from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±12 V (VGS) in the absolute maximum ratings.
2 D passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 20 V (VDS) with 2 A continuous drain current (ID).
3 S passive Source terminal of the N-channel MOSFET; the maximum continuous body-diode forward current is 1.0 A (IS).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-323
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: HXY2102EI
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: hxy2102ei-etched.step / hxy2102ei-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hxy2102ei.step / hxy2102ei.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 ff47a8714e50f4b9, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF