component
CD74HC373M
Public Made by Adomby adom
Texas Instruments Latches, SOIC-20-300mil. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCD74HC373M
Texas Instruments · Latches · SOIC-20-300mil
CD74HC373M from Texas Instruments, in a SOIC-20-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | OE | input | Buffered output-enable; when OE is high the eight Q outputs go to the high-impedance state without affecting the latches. |
| 2 | 1Q | tri_state | Output of latch 1, which follows 1D while LE is high and is high-impedance while OE is high. |
| 3 | 1D | input | Data input of latch 1, latched when LE goes low. |
| 4 | 2D | input | Data input of latch 2, latched when LE goes low. |
| 5 | 2Q | tri_state | Output of latch 2, which follows 2D while LE is high and is high-impedance while OE is high. |
| 6 | 3Q | tri_state | Output of latch 3, which follows 3D while LE is high and is high-impedance while OE is high. |
| 7 | 3D | input | Data input of latch 3, latched when LE goes low. |
| 8 | 4D | input | Data input of latch 4, latched when LE goes low. |
| 9 | 4Q | tri_state | Output of latch 4, which follows 4D while LE is high and is high-impedance while OE is high. |
| 10 | GND | power_in | Ground reference for the device. |
| 11 | LE | input | Latch enable; when high the Q outputs follow the D inputs and when low they hold the latched data. |
| 12 | 5Q | tri_state | Output of latch 5, which follows 5D while LE is high and is high-impedance while OE is high. |
| 13 | 5D | input | Data input of latch 5, latched when LE goes low. |
| 14 | 6D | input | Data input of latch 6, latched when LE goes low. |
| 15 | 6Q | tri_state | Output of latch 6, which follows 6D while LE is high and is high-impedance while OE is high. |
| 16 | 7Q | tri_state | Output of latch 7, which follows 7D while LE is high and is high-impedance while OE is high. |
| 17 | 7D | input | Data input of latch 7, latched when LE goes low. |
| 18 | 8D | input | Data input of latch 8, latched when LE goes low. |
| 19 | 8Q | tri_state | Output of latch 8, which follows 8D while LE is high and is high-impedance while OE is high. |
| 20 | VCC | power_in | Supply voltage, 2 V to 6 V VCC operation per the recommended operating conditions. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-20-300mil |
| Category | Logic |
| Pins | 20 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage range | VCC | -0.5 | 7 | V | 4 | ||
| Input clamp current | IIK | -20 | 20 | mA | VI < 0 or VI > VCC | 4 | |
| Output clamp current | IOK | -20 | 20 | mA | VO < 0 or VO > VCC | 4 | |
| Continuous output drain current per output | IO | -35 | 35 | mA | VO = 0 to VCC | 4 | |
| Continuous output source or sink current per output | IO | -25 | 25 | mA | VO = 0 to VCC | 4 | |
| Continuous current through VCC or GND | -50 | 50 | mA | 4 | |||
| Junction temperature | TJ | 150 | °C | 4 | |||
| Storage temperature range | Tstg | -65 | 150 | °C | 4 | ||
| Supply voltage | VCC | 2 | 6 | V | 4 | ||
| High-level input voltage | VIH | 1.5 | V | VCC = 2 V | 4 | ||
| High-level input voltage | VIH | 3.15 | V | VCC = 4.5 V | 4 | ||
| High-level input voltage | VIH | 4.2 | V | VCC = 6 V | 4 | ||
| Low-level input voltage | VIL | 0.5 | V | VCC = 2 V | 4 | ||
| Low-level input voltage | VIL | 1.35 | V | VCC = 4.5 V | 4 | ||
| Low-level input voltage | VIL | 1.8 | V | VCC = 6 V | 4 | ||
| Input voltage | VI | 0 | V | maximum VCC | 4 | ||
| Output voltage | VO | 0 | V | maximum VCC | 4 | ||
| Input transition (rise and fall) time | tt | 1000 | ns | VCC = 2 V | 4 | ||
| Input transition (rise and fall) time | tt | 500 | ns | VCC = 4.5 V | 4 | ||
| Input transition (rise and fall) time | tt | 400 | ns | VCC = 6 V | 4 | ||
| Operating free-air temperature | TA | -55 | 125 | °C | 4 | ||
| Junction-to-ambient thermal resistance | RθJA | 109.1 | °C/W | DW (SOIC), 20 pins | 4 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 76 | °C/W | DW (SOIC), 20 pins | 4 | ||
| Junction-to-board thermal resistance | RθJB | 77.6 | °C/W | DW (SOIC), 20 pins | 4 | ||
| Junction-to-top characterization parameter | ψJT | 51.5 | °C/W | DW (SOIC), 20 pins | 4 | ||
| Junction-to-top characterization parameter | ψJB | 77.1 | °C/W | DW (SOIC), 20 pins | 4 | ||
| High-level output voltage | VOH | 1.9 | V | VI = VIH or VIL; IOH = -20 μA; VCC = 2 V; TA = 25°C | 5 | ||
| High-level output voltage | VOH | 4.4 | V | VI = VIH or VIL; IOH = -20 μA; VCC = 4.5 V; TA = 25°C | 5 | ||
| High-level output voltage | VOH | 5.9 | V | VI = VIH or VIL; IOH = -20 μA; VCC = 6 V; TA = 25°C | 5 | ||
| High-level output voltage | VOH | 3.98 | V | VI = VIH or VIL; IOH = -6 mA; VCC = 4.5 V; TA = 25°C | 5 | ||
| High-level output voltage | VOH | 3.7 | V | VI = VIH or VIL; IOH = -6 mA; VCC = 4.5 V; TA = -55°C to 125°C | 5 | ||
| High-level output voltage | VOH | 5.48 | V | VI = VIH or VIL; IOH = -7.8 mA; VCC = 6 V; TA = 25°C | 5 | ||
| High-level output voltage | VOH | 5.2 | V | VI = VIH or VIL; IOH = -7.8 mA; VCC = 6 V; TA = -55°C to 125°C | 5 | ||
| Low-level output voltage | VOL | 0.1 | V | VI = VIH or VIL; IOL = 20 μA; VCC = 2 V; TA = 25°C | 5 | ||
| Low-level output voltage | VOL | 0.26 | V | VI = VIH or VIL; IOL = 6 mA; VCC = 4.5 V; TA = 25°C | 5 | ||
| Low-level output voltage | VOL | 0.4 | V | VI = VIH or VIL; IOL = 6 mA; VCC = 4.5 V; TA = -55°C to 125°C | 5 | ||
| Input leakage current | II | -0.1 | 0.1 | μA | VI = VCC or 0; VCC = 6 V; TA = 25°C | 5 | |
| Input leakage current | II | -1 | 1 | μA | VI = VCC or 0; VCC = 6 V; TA = -55°C to 125°C | 5 | |
| Off-state output leakage current | IOZ | -0.5 | 0.5 | μA | VO = VCC or 0; VCC = 6 V; TA = 25°C | 5 | |
| Off-state output leakage current | IOZ | -10 | 10 | μA | VO = VCC or 0; VCC = 6 V; TA = -55°C to 125°C | 5 | |
| Quiescent supply current | ICC | 8 | μA | VI = VCC or 0; IO = 0; VCC = 6 V; TA = 25°C | 5 | ||
| Quiescent supply current | ICC | 160 | μA | VI = VCC or 0; IO = 0; VCC = 6 V; TA = -55°C to 125°C | 5 |
CAD (KiCad official)
- Symbol:
CD74HC373M - Footprint:
Package_SO:SOIC-20W_7.5x12.8mm_P1.27mm - 3D model: SOIC-20-300mil (KiCad packages3D, STEP)
- 3D model files:
cd74hc373m-etched.step/cd74hc373m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cd74hc373m.step/cd74hc373m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (21 pp, sha256
c1a1a69ac5b95454, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).